Electronic structure modulation of Pb0.6Sn0.4Te via zinc doping and its effect on the thermoelectric properties

被引:0
|
作者
Shenoy, U.Sandhya [1 ]
Bhat, D.Krishna [2 ]
机构
[1] Shenoy, U.Sandhya
[2] Bhat, D.Krishna
来源
Shenoy, U.Sandhya (sandhyashenoy347@gmail.com) | 1600年 / Elsevier Ltd卷 / 872期
关键词
43;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] The effect of Ag concentration on the structural, electrical and thermal transport behavior of Pb:Te:Ag:Se mixtures and improvement of thermoelectric performance via Cu doping
    Capps, J.
    Ma, B.
    Drye, T.
    Nucklos, C.
    Lindsey, S.
    Rhodes, D.
    Zhang, Q.
    Modic, K.
    Cawthorne, S.
    Drymiotis, F.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (05) : 1544 - 1549
  • [42] Relationship between electrical properties and electronic structure of the thermoelectric Ag-In-Te system with chalcopyrite structure and its related defect-containing structure
    Fujii, Yosuke
    Tanaka, Koki
    Kosuga, Atsuko
    SCRIPTA MATERIALIA, 2019, 162 : 272 - 276
  • [43] Electronic structure, magnetic properties, spin orientation, and doping effect in Mn3Si2Te6
    Zhang, Yang
    Lin, Ling -Fang
    Moreo, Adriana
    Dagotto, Elbio
    PHYSICAL REVIEW B, 2023, 107 (05)
  • [44] MgTiO3 doping effect on dielectric properties of Ba0.6Sr0.4TiO3 ceramics via a molten salt process
    Ke, Shanming
    Fan, Huiqing
    Wang, Wei
    Jiao, Gangcheng
    Huang, Haitao
    Chan, H. L. W.
    COMPOSITES PART A-APPLIED SCIENCE AND MANUFACTURING, 2008, 39 (04) : 597 - 601
  • [45] Enhanced thermoelectric transport properties of Bi2Te3 polycrystalline alloys via carrier type change arising from slight Pb doping
    Park, Okmin
    Park, Sang Jeong
    Kim, Hyun-Sik
    Lee, Se Woong
    Heo, Minsu
    Kim, Sang-il
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 166
  • [46] Improved Structural Properties in Homogeneously Doped Sm0.4Ce0.6O2-δ Epitaxial Thin Films: High Doping Effect on the Electronic Bands
    Yang, Nan
    Knez, Daniel
    Vinai, Giovanni
    Torelli, Piero
    Ciancio, Regina
    Orgiani, Pasquale
    Aruta, Carmela
    ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (42) : 47556 - 47563
  • [47] Thermoelectric properties and electronic structure of p-type Mg2Si and Mg2Si0.6Ge0.4 compounds doped with Ga
    Ihou-Mouko, H.
    Mercier, C.
    Tobola, J.
    Pont, G.
    Scherrer, H.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (23) : 6503 - 6508
  • [48] Electronic and Thermoelectric Properties of Layered Sn- and Pb-Doped Ge2Sb2Te5 Alloys Using First Principle Calculations
    Singh, Janpreet
    Singh, Gurinder
    Kaura, Aman
    Tripathi, S. K.
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (06) : 2950 - 2956
  • [49] Electronic and Thermoelectric Properties of Layered Sn- and Pb-Doped Ge2Sb2Te5 Alloys Using First Principle Calculations
    Janpreet Singh
    Gurinder Singh
    Aman Kaura
    S. K. Tripathi
    Journal of Electronic Materials, 2016, 45 : 2950 - 2956
  • [50] Effect of boron substitution on the electronic structure of nanographene and its relevance to the thermoelectric transport properties in nanocarbon ensembles
    Redfern, Paul C.
    Gruen, Dieter
    Curtiss, Larry A.
    CHEMICAL PHYSICS LETTERS, 2009, 471 (4-6) : 264 - 268