Interlayer coupling and external electric field controllable electronic structures and Schottky contact of HfSeX (X = S, Se)/graphene van der Waals heterostructures

被引:0
|
作者
Luo, Qingqing [1 ]
Yin, Shaoqian [1 ]
Sun, Xiaoxin [1 ]
Guo, Gaofu [1 ]
Dai, Xianqi [1 ]
机构
[1] School of Physics, Henan Normal University, Xinxiang, Xinxiang,453007, China
关键词
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I
暂无
中图分类号
学科分类号
摘要
Calculations - Electric fields - Electronic structure - Field effect transistors - Light - Light absorption - Ohmic contacts - Optical properties - Schottky barrier diodes - Van der Waals forces
引用
收藏
相关论文
共 50 条
  • [21] Tuning Electronic Properties of Blue Phosphorene/Graphene-Like GaN van der Waals Heterostructures by Vertical External Electric Field
    Guo, Jingjing
    Zhou, Zhongpo
    Li, Hengheng
    Wang, Haiying
    Liu, Chang
    NANOSCALE RESEARCH LETTERS, 2019, 14 (1):
  • [22] Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain
    Zhang, W. X.
    Yin, Y.
    He, C.
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2020, 22 (45) : 26231 - 26240
  • [23] Van der Waals graphene/g-GaSe heterostructure: Tuning the electronic properties and Schottky barrier by interlayer coupling, biaxial strain, and electric gating
    Phuc, Huynh V.
    Ilyasov, Victor V.
    Hieu, Nguyen N.
    Amin, Bin
    Nguyen, Chuong V.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 750 : 765 - 773
  • [24] Tunable electronic structures and interface contact in graphene/C3N van der Waals heterostructures
    Min, Huang
    Li, Zhan-Hai
    Fang, Cheng
    ACTA PHYSICA SINICA, 2023, 72 (14)
  • [25] Graphene/WGe2N4 van der Waals heterostructure: Controllable Schottky barrier by an electric field
    Yuan, Xinqi
    Li, Hong
    Lu, Junyan
    An, Kang
    Liu, Fengbin
    Lu, Jing
    SURFACE SCIENCE, 2024, 742
  • [26] Strain Engineering and Electric Field Tunable Electronic Properties of Janus MoSSe/WX2 (X=S, Se) van der Waals Heterostructures
    Yu, Chen
    Wang, Zhiguo
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2019, 256 (11):
  • [27] Graphene/GeTe van der Waals heterostructure: Functional Schottky device with modulated Schottky barriers via external strain and electric field
    Gao, Xu
    Shen, Yanqing
    Ma, Yanyan
    Wu, Shengyao
    Zhou, Zhongxiang
    COMPUTATIONAL MATERIALS SCIENCE, 2019, 170
  • [28] Tunable Schottky barrier in Janus-XGa2 Y/Graphene (X/Y = S, Se, Te; X ≠ Y) van der Waals heterostructures
    Guo, Hao
    Lang, Xiufeng
    Tian, Xiaobao
    Jiang, Wentao
    Wang, Guangzhao
    NANOTECHNOLOGY, 2022, 33 (42)
  • [29] Electronic properties and interfacial contact of graphene/CrSiTe3 van der Waals heterostructures
    Chen, Li
    Jiang, Chuan
    Yang, Maoyou
    Wang, Dongchao
    Shi, Changmin
    Liu, Hongmei
    Cui, Guangliang
    Li, Xiaolong
    Shi, Jiakuo
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2022, 24 (07) : 4280 - 4286
  • [30] Tunable electronic structures of C2N/germanane van der waals heterostructures using an external electric field and normal strain
    Tan, Xingyi
    Luo, Jiayi
    Liu, Lili
    He, Yelu
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2020, 124 (124):