Research Progress of p-type Doping of β-Ga2O3

被引：0
|
作者：
He J. [1 ]
Jiao S. [1 ]
Nie Y. [1 ]
Gao S. [1 ]
Wang D. [1 ]
Wang J. [1 ]
机构：
[1] School of Materials Science and Engineering, Harbin Institute of Technology, Harbin
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2024年 / 45卷 / 04期
基金：
中国国家自然科学基金;
关键词：
intrinsic defects; p-type doping; semiconductors; wide bandgap semiconductors; β-Ga[!sub]2[!/sub]O[!sub]3[!/sub;
D O I：
10.37188/CJL.20230328
中图分类号：
学科分类号：
摘要：
β-Ga2O3 has many advantages such as wide bandgap，high breakdown field strength，and high Baliga's figure of merit，making it an emerging semiconductor material with great potential for high-power electronic devices，gas sensors，and solar-blind ultraviolet detectors. However，the challenge of achieving p-type doping poses a major obstacle to the development of β-Ga2O3. Firstly，the advantages of β-Ga2O3 have been outlined briefly，and its structure and basic properties have been introduced as well. Secondly，the effect of the intrinsic defects of β-Ga2O3 on electrical conductivity has been discussed detailed，especially，for the oxygen vacancy. And then，the current research status of p-type doping in β-Ga2O3 has been discussed including N，Mg，Zn and other acceptor elements doping，co-doping with two elements and other methods. Additionally，the reasons for difficulty in p-type doping have been presented. Finally，this review discussed and looked forward to future developments for β-Ga2O3 © 2024 Editorial Office of Chinese Optics. All rights reserved.
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页码：557 / 567
页数：10
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