Research Progress of p-type Doping of β-Ga2O3

被引：0

作者：

He J. ^{[1
]}

Jiao S. ^{[1
]}

Nie Y. ^{[1
]}

Gao S. ^{[1
]}

Wang D. ^{[1
]}

Wang J. ^{[1
]}

机构：

[1] School of Materials Science and Engineering, Harbin Institute of Technology, Harbin

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2024年 / 45卷 / 04期

基金：

中国国家自然科学基金;

关键词：

intrinsic defects; p-type doping; semiconductors; wide bandgap semiconductors; β-Ga[!sub]2[!/sub]O[!sub]3[!/sub;

D O I：

10.37188/CJL.20230328

中图分类号：

学科分类号：

摘要：

β-Ga2O3 has many advantages such as wide bandgap，high breakdown field strength，and high Baliga's figure of merit，making it an emerging semiconductor material with great potential for high-power electronic devices，gas sensors，and solar-blind ultraviolet detectors. However，the challenge of achieving p-type doping poses a major obstacle to the development of β-Ga2O3. Firstly，the advantages of β-Ga2O3 have been outlined briefly，and its structure and basic properties have been introduced as well. Secondly，the effect of the intrinsic defects of β-Ga2O3 on electrical conductivity has been discussed detailed，especially，for the oxygen vacancy. And then，the current research status of p-type doping in β-Ga2O3 has been discussed including N，Mg，Zn and other acceptor elements doping，co-doping with two elements and other methods. Additionally，the reasons for difficulty in p-type doping have been presented. Finally，this review discussed and looked forward to future developments for β-Ga2O3 © 2024 Editorial Office of Chinese Optics. All rights reserved.

引用

页码：557 / 567

页数：10

共 66 条

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