Inks of dielectric h-BN and semiconducting WS2for capacitive structures with graphene

被引:0
|
作者
Desai, Jay A. [1 ,2 ,3 ,4 ]
Mazumder, Sangram [2 ,3 ]
Hossain, Ridwan Fayaz [3 ]
Kaul, Anupama B. [2 ,3 ]
机构
[1] [1,2,3,Desai, Jay A.
[2] 2,Mazumder, Sangram
[3] Hossain, Ridwan Fayaz
[4] 2,Kaul, Anupama B.
来源
| 1600年 / AVS Science and Technology Society卷 / 38期
关键词
Graphene;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Enhancing exciton diffusion in monolayer WS2 with h-BN bottom layer
    Kang, Jang-Won
    Jung, Jin-Woo
    Lee, Taejin
    Kim, Jung Gon
    Cho, Chang-Hee
    PHYSICAL REVIEW B, 2019, 100 (20)
  • [22] Scalable synthesis of WS2 on graphene and h-BN: an all-2D platform for light-matter transduction
    Rossi, Antonio
    Buch, Holger
    Di Rienzo, Carmine
    Miseikis, Vaidotas
    Convertino, Domenica
    Al-Temimy, Ameer
    Voliani, Valerio
    Gemmi, Mauro
    Piazza, Vincenzo
    Coletti, Camilla
    2D MATERIALS, 2016, 3 (03):
  • [23] Hall sensors batch-fabricated on all-CVD h-BN/graphene/h-BN heterostructures
    Dankert, Andre
    Karpiak, Bogdan
    Dash, Saroj P.
    SCIENTIFIC REPORTS, 2017, 7
  • [24] Band alignment determination of bulk h-BN and graphene/h-BN laminates using photoelectron emission microscopy
    Ogawa, Shuichi
    Yamada, Takatoshi
    Kadowaki, Ryo
    Taniguchi, Takashi
    Abukawa, Tadashi
    Takakuwa, Yuji
    JOURNAL OF APPLIED PHYSICS, 2019, 125 (14)
  • [25] Pressure effect on the spin-dependent electronic structure of Au intercalated h-BN/graphene/h-BN
    Xia, Youzhi
    Li, Zhongyao
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (50)
  • [26] In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains
    Geng, Dechao
    Dong, Jichen
    Ang, Lay Kee
    Ding, Feng
    Yang, Hui Ying
    NPG ASIA MATERIALS, 2019, 11 (1)
  • [27] Hall sensors batch-fabricated on all-CVD h-BN/graphene/h-BN heterostructures
    André Dankert
    Bogdan Karpiak
    Saroj P. Dash
    Scientific Reports, 7
  • [28] In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains
    Dechao Geng
    Jichen Dong
    Lay Kee Ang
    Feng Ding
    Hui Ying Yang
    NPG Asia Materials, 2019, 11
  • [29] Temperature- and density-dependent transport regimes in a h-BN/bilayer graphene/h-BN heterostructure
    Cobaleda, C.
    Pezzini, S.
    Diez, E.
    Bellani, V.
    PHYSICAL REVIEW B, 2014, 89 (12):
  • [30] Chiral properties of graphene h-BN hybrid systems
    Molenda, A.
    Zasada, I.
    Maslanka, P.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2019, 107 : 160 - 169