Research Progress of GaN Power Device/Module Packaging Technology

被引：0
|
作者：
Liu S. [1 ]
Mei Y. [2 ]
机构：
[1] School of Materials Science and Engineering, Tianjin University, Nankai District, Tianjin
[2] School of Electrical Engineering, Tiangong University, Xiqing District, Tianjin
来源：
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2023年 / 43卷 / 13期
基金：
中国国家自然科学基金;
关键词：
GaN high electron mobility transistor (GaN HEMT); heat dissipation; packaging technology; power devices; power modules; reliability; stray inductance;
D O I：
10.13334/j.0258-8013.pcsee.220032
中图分类号：
学科分类号：
摘要：
GaN offers the benefits of high-temperature resistance, high breakdown voltage, and high electron migration rate as a popular wide bandgap semiconductor material. Packaging technology is critical to make use of these benefits fully and for device to be operated reliably. Firstly, the similarities and differences of Si-based, SiC-based, and GaN-based devices/modules are compared and discussed. The difficulties and solutions are then addressed from the perspectives of package stray inductance, heat dissipation design, and interconnection reliability. The possible shortcomings of the current research are discussed. Based on the review and analysis, this paper finally put forward the urgent problems to be solved in the future on GaN power device/module packaging technology and the research prospects. ©2023 Chin.Soc.for Elec.Eng.
引用
收藏
页码：5116 / 5131
页数：15
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