Research on Short-circuit Characteristics and Overcurrent Protection of SiC MOSFET

被引：0
|
作者：
Wang Z. [1 ]
Tong C. [1 ]
Huang W. [2 ]
机构：
[1] School of Automation and Electrical Engineering, University of Science and Technology Beijing, Haidian District, Beijing
[2] Collaborative Innovation Center of Key Power Energy-Saving Technology in Beijing, North China University of Technology, Shijingshan District, Beijing
来源：
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2020年 / 40卷 / 18期
关键词：
Short circuit characteristics; Short circuit protection; SiC MOSFET; V[!sub]DS(ON)[!/sub] detection; V[!sub]GS[!/sub] detection;
D O I：
10.13334/j.0258-8013.pcsee.200511
中图分类号：
学科分类号：
摘要：
The short circuit characteristics and overcurrent protection of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) was studied. Firstly, the short-circuit current and voltage drop VDS(ON) of SiC MOSFET in short circuit state were measured and analyzed under different bus voltage and ambient temperature. Based on the analysis of short circuit characteristics, an overcurrent protection circuit based on VDS(ON) detection was designed, and the effects of two kinds of blanking circuits on protection were compared. the experimental results show that when the blanking circuit works, the larger charging current can effectively shorten the protection time. But the power consumption of the circuit is high. A short-through short-circuit protection method based on gate voltage VGS voltage detection was proposed. The gate voltage of two SiC MOSFET in half-bridge was compared with the gate threshold voltage. If the gate voltage of both SiC MOSFET exceeds the threshold voltage, it can be judged that a shoot-through short circuit has occurred. The experimental results show that the proposed shoot-through protection method has the characteristics of fast protection time and low current, and can protect SiC MOSFET effectively. © 2020 Chin. Soc. for Elec. Eng.
引用
收藏
页码：5751 / 5759
页数：8
相关论文
共 31 条
  • [21] Yoon H, Cho Y., Application of the Rogowski coil current sensor for overcurrent detection and blocking in power conversion systems, 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019-ECCE Asia), (2019)
  • [22] Wang Jun, Shen Zhiyu, Dimarino C, Et al., Gate driver design for 1. 7kV SiC MOSFET module with Rogowski current sensor for short circuit protection, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 516-523, (2016)
  • [23] Zhang Wen, Wang F, Zhang Zheyu, Et al., Fast wide- bandgap device overcurrent protection with direct current measurement, 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019-ECCE Asia), (2019)
  • [24] Cui Yujia, Zhang Zhe, Yi Peizhong, Et al., Investigation of current mirror based overcurrent protection for 1200V 800A high power SiC MOSFET modules[C], 2019 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 6161-6165, (2019)
  • [25] Wang Zhankuo, Tong Chaonan, Zhang Yongchang, Et al., Research on temperature-dependent overcurrent protection schemes for SiC MOSFETs[C], 2018 21st International Conference on Electrical Machines and Systems (ICEMS), pp. 822-826, (2018)
  • [26] Horiguchi T, Kinouch S I, Nakayama Y, Et al., A fast short-circuit protection method using gate charge characteristics of SiC MOSFETs, 2015 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 4756-4764, (2015)
  • [27] Rothmund D, Bortis D, Kolar J W, Et al., Highly compact isolated gate driver with ultrafast overcurrent protection for 10kV SiC MOSFETs[J], CPSS Transactions on Power Electronics and Applications, 3, 4, pp. 278-291, (2018)
  • [28] Lutz J, Basler T, Et al., Short-circuit ruggedness of high-voltage IGBTs[C], 2012 28th International Conference on Microelectronics Proceedings, pp. 243-250, (2012)
  • [29] Chokhawala R S, Catt J, Kiraly L, Et al., A discussion on IGBT short-circuit behavior and fault protection schemes [J], IEEE Transactions on Industry Applications, 31, 2, pp. 256-263, (1995)
  • [30] Hu Liangdeng, Sun Chi, Chen Yulin, Et al., Short-circuit fault detection for high-power IGBT, Transactions of China Electrotechnical Society, 33, 11, pp. 2592-2603, (2018)
1234