Research on Short-circuit Characteristics and Overcurrent Protection of SiC MOSFET

被引：0

作者：

Wang Z. ^{[1
]}

Tong C. ^{[1
]}

Huang W. ^{[2
]}

机构：

[1] School of Automation and Electrical Engineering, University of Science and Technology Beijing, Haidian District, Beijing

[2] Collaborative Innovation Center of Key Power Energy-Saving Technology in Beijing, North China University of Technology, Shijingshan District, Beijing

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2020年 / 40卷 / 18期

关键词：

Short circuit characteristics; Short circuit protection; SiC MOSFET; V[!sub]DS(ON)[!/sub] detection; V[!sub]GS[!/sub] detection;

D O I：

10.13334/j.0258-8013.pcsee.200511

中图分类号：

学科分类号：

摘要：

The short circuit characteristics and overcurrent protection of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) was studied. Firstly, the short-circuit current and voltage drop VDS(ON) of SiC MOSFET in short circuit state were measured and analyzed under different bus voltage and ambient temperature. Based on the analysis of short circuit characteristics, an overcurrent protection circuit based on VDS(ON) detection was designed, and the effects of two kinds of blanking circuits on protection were compared. the experimental results show that when the blanking circuit works, the larger charging current can effectively shorten the protection time. But the power consumption of the circuit is high. A short-through short-circuit protection method based on gate voltage VGS voltage detection was proposed. The gate voltage of two SiC MOSFET in half-bridge was compared with the gate threshold voltage. If the gate voltage of both SiC MOSFET exceeds the threshold voltage, it can be judged that a shoot-through short circuit has occurred. The experimental results show that the proposed shoot-through protection method has the characteristics of fast protection time and low current, and can protect SiC MOSFET effectively. © 2020 Chin. Soc. for Elec. Eng.

引用

页码：5751 / 5759

页数：8

共 31 条

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