NbO2-based locally active memristors: from physical mechanisms to performance optimization

被引：0
|
作者：
Chen, Pei [1 ,2 ]
Zhang, Xumeng [1 ,3 ,4 ]
Liu, Qi [1 ,3 ,4 ]
Liu, Ming [1 ,3 ,4 ]
机构：
[1] State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University, Shanghai,200433, China
[2] School of Microelectronics, Fudan University, Shanghai,200433, China
[3] Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai,200433, China
[4] Shanghai Qi Zhi Institute, Shanghai,200232, China
来源：
Applied Physics A: Materials Science and Processing | 2022年 / 128卷 / 12期
基金：
中国国家自然科学基金;
关键词：
Metal insulator transition - Negative resistance - Neurons - Niobium oxide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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