Electric field tunable bandgap and anisotropic high carrier mobility in SiAs2/GeAs2 lateral heterostructure

被引：0
|
作者：
Feng, Leihao [1 ]
Zhang, Xi [1 ]
Xiang, Gang [1 ]
机构：
[1] College of Physics, Sichuan University, Sichuan Province, Chengdu,610065, China
来源：
Computational Materials Science | 2021年 / 198卷
关键词：
549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals - 701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 921 Mathematics - 931.2 Physical Properties of Gases; Liquids and Solids;
D O I：
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摘要：
48
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