ReSe2 continuous-wave mode-locked Nd: YVO4 intracavity frequency-doubled green laser

被引:0
|
作者
Xue Y. [1 ]
Bai B. [1 ]
Zhang B. [1 ]
Li L. [1 ]
机构
[1] College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin
关键词
Intracavity frequency doubling; KTP crystal; Lasers; LBO crystal; Nd: YVO[!sub]4[!/sub] crystal; Passive mode-locking; Second harmonic; Two-dimensional material ReSe[!sub]2[!/sub; V-shaped cavity resonator;
D O I
10.11990/jheu.202008064
中图分类号
学科分类号
摘要
To develop the application of new two-dimensional materials in frequency-doubled mode-locked lasers, ReSe2, an emerging kind of two-dimensional materials, is used as the saturable absorber mode-locking element in this study to examine the diode end-pumped Nd: YVO4 intracavity frequency-doubled green laser, thus obtaining the ReSe2 mode-locking green pulse laser with megahertz-level high repetition frequency and nanosecond-level narrow pulse width. The design of the compact V-shaped cavity and the intracavity frequency-doubled scheme are incorporated. The passive mode-locked oscillation of the fundamental frequency operates at 1064 nm. By exploiting the nonlinear crystals of LiB3O5 and KTiOPO4 for the second harmonic frequency conversion, the 532 nm frequency-doubled laser pulse is generated. With the LiB3O5 crystal for frequency doubling, the output repetition frequency of the continuous-wave mode-locked green pulse output is 87.51 MHz, the pulse width is 3.5 ns, and the average power is 240 mW. Under the same experimental conditions and with the KTiOPO4 crystal for frequency doubling, the maximum output power can be improved over 470 mW. The research results provide an available green pulse laser source for the development of underwater laser detection technology at high sampling rates. © 2021, Editorial Department of Journal of HEU. All right reserved.
引用
收藏
页码:1237 / 1242
页数:5
相关论文
共 30 条
  • [21] ZHANG Guang, WANG Yongguang, CHEN Zhendong, Et al., High repetition rate QML YVO<sub>4</sub>/Nd: YVO<sub>4</sub>/YVO<sub>4</sub> laser with a reflective MoS<sub>2</sub>-SA, IEEE photonics technology letters, 30, 6, pp. 553-556, (2018)
  • [22] ZENG Yingjie, WANG Yonggang, REN Wei, Et al., Watt-level passively Q-switched and mode-locked Nd: YAG laser with a reflective MoS<sub>2</sub> saturable absorber, Optics & laser technology, 108, pp. 355-359, (2018)
  • [23] LI Linjun, YANG Xining, ZHOU Long, Et al., Active/passive Q-switching operation of 2μm Tm, Ho: YAP laser with an acousto-optical Q-switch/MoS<sub>2</sub> saturable absorber mirror, Photonics research, 6, 6, pp. 614-619, (2018)
  • [24] WEN Qiao, SUN Liqun, WANG Yonggang, Et al., An effective method for designing insensitive resonator of continuous-wave passively mode-locked laser, Optics express, 17, 11, pp. 8956-8961, (2009)
  • [25] WOLVERSON D, CRAMPIN S, KAZEMI A S, Et al., Raman spectra of monolayer, few-layer, and bulk ReSe<sub>2</sub>: an anisotropic layered semiconductor, ACS nano, 8, 11, pp. 11154-11164, (2014)
  • [26] JIANG Shaolong, ZHANG Zhepeng, ZHAG Na, Et al., Application of chemical vapor-deposited monolayer ReSe<sub>2</sub> in the electrocatalytic hydrogen evolution reaction, Nano research, 11, 4, pp. 1787-1797, (2018)
  • [27] HAFEEZ M, GAN Lin, BHATTI A S, Et al., Rhenium dichalcogenides (ReX<sub>2</sub>, X=S or Se): an emerging class of TMDs family, Materials chemistry frontiers, 1, 10, pp. 1917-1932, (2017)
  • [28] MAK K F, SHAN Jie, Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides, Nature photonics, 10, 4, pp. 216-226, (2016)
  • [29] ISLAND J O, STEELE G A, VAN DER ZANT H S J, Et al., Environmental instability of few-layer black phosphorus, 2D materials, 20152, 1
  • [30] WANG Qinghua, KALANTAR-ZADEH K, KIS A, Et al., Electronics and optoelectronics of two-dimensional transition metal dichalcogenides, Nature nanotechnology, 7, 11, pp. 699-712, (2012)