Development of SiC merged reverse conductive devices

被引：0
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作者：
Sugawara, Yoshitaka [1 ]
机构：
[1] SiC Power Electronics Network (Spen), Hitachi,Ibaraki, Japan
来源：
Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi) | 2021年 / 214卷 / 02期
关键词：
Silicon carbide;
D O I：
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摘要：
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