Si doping-induced phase control, formation of p-type and n-type GaAs nanowires

被引：0
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作者：
Kang, Yubin [1 ]
Tang, Jilong [1 ]
Azad, Fahad [2 ]
Zhu, Xiaotian [1 ]
Chen, Xue [1 ]
Chu, Xueying [1 ]
Wang, Dengkui [1 ]
Fang, Xuan [1 ]
Fang, Dan [1 ]
Lin, Fengyuan [1 ]
Li, Kexue [1 ]
Wang, Xiaohua [1 ]
Wei, Zhipeng [1 ]
机构：
[1] State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun,130022, China
[2] School of Natural Sciences (SNS), National University of Sciences and Technology (NUST), H-12 Islamabad, Islamabad,44000, Pakistan
来源：
Vacuum | 2022年 / 195卷
基金：
中国国家自然科学基金;
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