Power Cycling Test Technologies for Power Semiconductor Devices-challenges and Analysis

被引：0

作者：

Deng E. ^{[1
]}

Yan Y. ^{[1
]}

Chen J. ^{[1
]}

Xie L. ^{[1
]}

Wang Y. ^{[1
]}

Zhao Y. ^{[1
]}

Huang Y. ^{[1
]}

机构：

[1] State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Changping District, Beijing

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2023年 / 43卷 / 13期

基金：

中国国家自然科学基金;

关键词：

analysis; challenges; power cycling test; power devices; silicon carbon metal-oxide-semiconductor field-effect transistor (SiC MOSFET);

D O I：

10.13334/j.0258-8013.pcsee.220278

中图分类号：

学科分类号：

摘要：

Power cycling testing, crucial for evaluating power semiconductors package reliability, and especially important with fast SiC MOSFET development, is easy in principle but challenging in test technology, methods and data processing due to the interdisciplinary(semiconductor physics, electromagnetic, heat transfer, structural mechanics, signal analysis). This paper deeply analyzes the three main challenges. Test technology challenges include electrical measurement noise, delay time after current switches off before junction temperature measurement, and data acquisition points. The first two affect junction temperature measurement and failure mode judgment and lifetime, respectively. Test methods include junction temperature measurement and current excitation for SiC MOSFETs. Current excitation requires attention since it can change failure mechanisms and lifetime. Data processing explores sample sizes and the correcting results to improve accuracy from a mathematical statistics perspective. This can establish a theoretical and methodological foundation for developing power cycling test technology and guide power cycling and data analysis. ©2023 Chin.Soc.for Elec.Eng.

引用

页码：5132 / 5150

页数：18

共 59 条

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