Design and Performance of Quantum Dot Light-emitting Diode Based on TiO2 Modified Layer

被引：0
|
作者：
Liu W.-W. [1 ]
Kong Y.-C. [1 ]
Chen X.-B. [1 ]
Hu X.-Y. [1 ]
Miao Z.-Z. [1 ]
机构：
[1] Department of Physics and Electronic Engineering, Yancheng Teachers University, Yancheng
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2022年 / 43卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Interface modification; Light-emitting diodes; Quantum dot; TiO[!sub]2[!/sub;
D O I：
10.37188/CJL.20220002
中图分类号：
学科分类号：
摘要：
Due to high color saturation and high color purity, quantum dot(QD) light-emitting diodes(QLEDs) have become one of the hotspots in LEDs research for their potential application in lighting and display. Surface and interface issues have become a thorny issue which restricting the development of QLEDs with multilayer structure. In this paper, the interface between electron transport layer zinc oxide(ZnO) and QDs emitting layer was modified by inserting titanium dioxide(TiO2) layers with different thickness based on atomic layer deposition(ALD) technology. After inserting 0.270 nm TiO2 modified layer, the leakage current of the QLEDs was significantly reduced about an order of magnitude, and the average lifetime of the excitons increased from 15.94 ns to 16.61 ns, indicating that the insertion of the TiO2 modified layer can effectively prevent the exciton quenching in QDs emitting layer, thereby enhancing the current efficiency of the QLEDs under low driving voltage(about increased 15%). The above results are expected to provide a reference for the industrialization of QLEDs in the field of lighting and display. © 2022, Science Press. All right reserved.
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页码：381 / 387
页数：6
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