Efficient and High-Brightness Broad Area Laser Diodes Designed for High-Temperature Operation: Advantages of semiconductor laser diodes as efficient high-power laser light sources applicable at elevated ambient temperatures

被引:0
|
作者
JENOPTIK Optical Systems GmbH, Max-Planck-Strasse 2, Berlin [1 ]
12489, Germany
机构
关键词
Costs - High power lasers - Laser materials processing - Optical pumping - Power semiconductor diodes - Semiconductor lasers - Solid state lasers - Temperature;
D O I
10.1002/phvs.202000016
中图分类号
学科分类号
摘要
Semiconductor laser diodes, manufactured as single emitters or laser bars, are highly desired light sources for direct material processing as well as optical pumping of fiber and solid-state lasers. Laser diodes feature high optical output power and efficiency, long lifetimes, low maintenance and consequently low cost of ownership. To improve the usability and extend the application spectrum of high-power laser diodes, relaxed cooling requirements -- without compromise in laser performance and lifetime -- are required. Therefore, great development efforts are made, both in externally and internally funded research projects, to push the maximum permissible operating temperature of such semiconductor laser diodes to higher levels. © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:52 / 56
相关论文
共 50 条
  • [1] High-power and high-brightness visible semiconductor laser diodes
    Hamilton, CJ
    Kowalski, OP
    Bryce, AC
    Marsh, JH
    IN-PLANE SEMICONDUCTOR LASERS IV, 2000, 3947 : 91 - 97
  • [2] Efficient High-Power Laser Diodes
    Crump, Paul
    Erbert, Goetz
    Wenzel, Hans
    Frevert, Carlo
    Schultz, Christoph M.
    Hasler, Karl-Heinz
    Staske, Ralf
    Sumpf, Bernd
    Maassdorf, Andre
    Bugge, Frank
    Knigge, Steffen
    Traenkle, Guenther
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (04)
  • [3] Semiconductor unstable-resonator laser diodes for high-power and high-brightness applications
    Deichsel, E
    Unger, P
    SEMICONDUCTOR LASERS AND APPLICATIONS, 2002, 4913 : 90 - 97
  • [4] 808 nm broad-area laser diodes designed for high efficiency at high-temperature operation
    Lan, Yu
    Yang, Guowen
    Liu, Yuxian
    Zhao, Yuliang
    Wang, Zhenfu
    Li, Te
    Demir, Abdullah
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (10)
  • [5] Corrections to 'efficient high-power laser diodes'
    1600, Institute of Electrical and Electronics Engineers Inc., 445 Hoes Lane / P.O. Box 1331, Piscataway, NJ 08855-1331, United States (20):
  • [6] Bringing high brightness to high-power laser diodes
    Hecht, Jeff
    LASER FOCUS WORLD, 2011, 47 (11): : 43 - 46
  • [7] High-power, high-efficiency, high-brightness long-wavelength laser diodes
    Patterson, Steve
    Crump, Paul
    Wang, Jun
    Dong, Weimin
    Grimshaw, Mike
    Zhang, Shiguo
    Elim, Sandrio
    Das, Suhit
    Bougher, Mike
    Patterson, Jason
    Kuang, Guokui
    Bell, Jake
    Farmer, Jason
    DeVito, Mark
    LASER SOURCE AND SYSTEM TECHNOLOGY FOR DEFENSE AND SECURITY II, 2006, 6216
  • [8] Highly reliable high-power broad area laser diodes
    Rossin, V
    Peters, M
    Zucker, E
    Acklin, B
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS IV, 2006, 6104
  • [9] Design and Simulation of Next-Generation High-Power, High-Brightness Laser Diodes
    Lim, Jun Jun
    Sujecki, Slawomir
    Lang, Lei
    Zhang, Zhichao
    Paboeuf, David
    Pauliat, Gilles
    Lucas-Leclin, Gaelle
    Georges, Patrick
    MacKenzie, Roderick C. I.
    Bream, Philip
    Bull, Stephen
    Hasler, Karl-Heinz
    Sumpf, Bernd
    Wenzel, Hans
    Erbert, Goetz
    Thestrup, Birgitte
    Petersen, Paul Michael
    Michel, Nicolas
    Krakowski, Michel
    Larkins, Eric C.
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (03) : 993 - 1008
  • [10] HIGH-POWER CW OPERATION OF BROAD AREA INGAAIP VISIBLE-LIGHT LASER-DIODES
    ITAYA, K
    HATAKOSHI, G
    WATANABE, Y
    ISHIKAWA, M
    UEMATSU, Y
    ELECTRONICS LETTERS, 1990, 26 (03) : 214 - 215