HIGH-POWER CW OPERATION OF BROAD AREA INGAAIP VISIBLE-LIGHT LASER-DIODES

被引：20
|
作者：
ITAYA, K
HATAKOSHI, G
WATANABE, Y
ISHIKAWA, M
UEMATSU, Y
机构：
[1] Toshiba Research & Development Centre, Kawasaki 210, 1, Komukai Toshiba-cho, Saiwai-ku
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 03期
关键词：
Lasers and laser applications; Optoelectronics;
D O I：
10.1049/el:19900144
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Broad area InGaAlP visible light laser diodes with antireflection and high-reflection coatings have been fabricated. High power cw operation above 300 mW was obtained at 2°C heat-sink temperature. This value corresponded to a light power density of 2.7MW/cm2. The far field pattern showed a single lobe shape for output power up to 100 mW. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：214 / 215
页数：2
相关论文
共 50 条
  • [1] HIGH-POWER OPERATION OF HETEROBARRIER BLOCKING STRUCTURE INGAAIP VISIBLE-LIGHT LASER-DIODES
    ITAYA, K
    WATANABE, Y
    ISHIKAWA, M
    HATAKOSHI, G
    UEMATSU, Y
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (18) : 1718 - 1719
  • [2] CW OPERATION AT -10-DEGREES-C FOR INGAAIP VISIBLE-LIGHT LASER-DIODES GROWN BY MOCVD
    ISHIKAWA, M
    OHBA, Y
    SUGAWARA, H
    YAMAMOTO, M
    NAKANISI, T
    [J]. ELECTRONICS LETTERS, 1985, 21 (23) : 1084 - 1085
  • [3] RELIABLE HIGH-POWER OPERATION OF INGAALP VISIBLE-LIGHT LASER-DIODES WITH STRAINED ACTIVE LAYER
    NITTA, K
    ITAYA, K
    NISHIKAWA, Y
    ISHIKAWA, M
    OKAJIMA, M
    HATAKOSHI, G
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3862 - 3864
  • [4] EFFECT OF FACET COATING ON THE RELIABILITY OF INGAAIP VISIBLE-LIGHT LASER-DIODES
    ITAYA, K
    ISHIKAWA, M
    OKUDA, H
    WATANABE, Y
    NITTA, K
    SHIOZAWA, H
    UEMATSU, Y
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (15) : 1363 - 1365
  • [5] HIGHLY RELIABLE 100MW OPERATION OF BROAD AREA INGAALP VISIBLE-LIGHT LASER-DIODES
    ITAYA, K
    SHIMADA, N
    HATAKOSHI, G
    [J]. ELECTRONICS LETTERS, 1991, 27 (24) : 2257 - 2259
  • [6] HIGH-POWER, 8.5W CW, VISIBLE LASER-DIODES
    WELCH, DF
    SCIFRES, DR
    [J]. ELECTRONICS LETTERS, 1991, 27 (21) : 1915 - 1916
  • [7] HIGHLY RELIABLE TRANSVERSE-MODE STABILIZED INGAALP VISIBLE-LIGHT LASER-DIODES AT HIGH-POWER OPERATION
    ITAYA, K
    ISHIKAWA, M
    NITTA, K
    OKAJIMA, M
    HATAKOSHI, G
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (4A): : L590 - L592
  • [8] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    ISHIKAWA, M
    OHBA, Y
    SUGAWARA, H
    YAMAMOTO, M
    NAKANISI, T
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (03) : 207 - 208
  • [9] Catastrophic Optical-Damage in High-Power, Broad-Area Laser-Diodes
    Chin, Aland K.
    Bertaska, Rick K.
    Jaspan, Martin A.
    Flusberg, Allen M.
    Swartz, Steve D.
    Knapczyk, Maciej T.
    Smilanski, Israel
    Jacob, Jonah H.
    [J]. RELIABILITY AND MATERIALS ISSUES OF SEMICONDUCTOR OPTICAL AND ELECTRICAL DEVICES AND MATERIALS, 2010, 1195
  • [10] HIGH-POWER CW OPERATION OF 780-NM T3 LASER-DIODES
    SHIMA, A
    YAMAWAKI, T
    SAITO, H
    MATSUBARA, H
    MURAKAMI, T
    OHTAKI, K
    KUMABE, H
    SUSAKI, W
    [J]. ELECTRONICS LETTERS, 1987, 23 (13) : 672 - 674
12345