Stable Low Electron Concentration β-Ga2O3Films Grown by Metal-Organic Chemical Vapor Deposition

被引：1

作者：

Jiao T. ^{[1
]}

Li Z. ^{[1
]}

Li W. ^{[1
]}

Dong X. ^{[1
]}

Zhang Y. ^{[1
]}

Zhang B. ^{[1
]}

Du G. ^{[1
]}

机构：

[1] State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun

来源：

ECS Journal of Solid State Science and Technology | 2020年 / 9卷 / 05期

关键词：

D O I：

10.1149/2162-8777/ab96ab

中图分类号：

学科分类号：

摘要：

The Si-doped β-Ga2O3 films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Then the films were annealed in oxygen to reduce the intrinsic defects effectively. The effect of the Si doping concentration and the oxygen annealing time on the properties of β-Ga2O3 films was studied in detail. It was found that the crystal structure, surface morphology and electrical characteristics of the films can be changed regularly by adjusting the Si content and annealing time. β-Ga2O3 films with high quality and stable electron concentration can be obtained by this method. © 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.

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