Effect of p-GaN Spacer Layer on Emission Spectrum of Yellow-green Dual Wavelength LED

被引：0
|
作者：
p-GaN插入层调控InGaN基黄绿双波长LED发光光谱
机构：
[1] Wei, Duo-Lei
[2] Zhang, Jian-Li
[3] Liu, Jun-Lin
[4] Wang, Xiao-Lan
[5] Wu, Xiao-Ming
[6] Zheng, Chang-Da
[7] Jiang, Feng-Yi
来源：
Zhang, Jian-Li (yilu.yang@yahoo.com.cn) | 1600年 / Editorial Office of Chinese Optics卷 / 41期
基金：
中国国家自然科学基金;
关键词：
Current density - Organic chemicals - III-V semiconductors - Metallorganic chemical vapor deposition - Semiconductor quantum wells - Silicon - Emission spectroscopy - Organometallics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：146 / 152
相关论文
共 50 条
  • [41] Effect of threading strain from the interface between P-GaN and an annealed ITO transparent conducting layer to InGaN/GaN multiple quantum wells
    Lin, Yen-Sheng
    Li, Ching Ning
    Tseng, Chun-Lung
    Shen, Ching-Hsing
    Mayer, Joachim
    Su, Shui-Hsiang
    VACUUM, 2020, 172
  • [42] The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance
    Hussin, Hayatun Najihah
    Talik, Noor Azrina
    Abd Rahman, Mohd Nazri
    Mahat, Mohd Raqif
    Poopalan, Prabakaran
    Shuhaimi, Ahmad
    Abd Majid, Wan Haliza
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 121
  • [43] TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs
    Zhang, Ga
    Zhao, Shenglei
    Wang, Zhizhe
    Song, Xiufeng
    Liu, Shuang
    Sun, Xuejing
    Yu, Longyang
    You, Shuzhen
    Liu, Zhihong
    Hao, Yue
    Zhang, Jincheng
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (07) : 4119 - 4124
  • [44] Improved efficiency of green GaN LEDs via exciton-surface plasmon coupling by Au nanoclusters embedded in a micro-hole patterned p-GaN layer
    Park, Ah Hyun
    Baek, Seungjae
    Choi, Go Bong
    Kim, Yoong Ahm
    Lim, Jinsub
    Seo, Tae Hoon
    APPLIED PHYSICS LETTERS, 2021, 119 (18)
  • [45] Enhanced electrical characteristics of AlGaN/GaN heterostructure field-effect transistor with p-GaN back barriers and Si delta-doped layer
    Lee, Hwa-Chul
    Hyun, Sun-Young
    Cho, Hyun-Ick
    Ostermaier, Clemens
    Kim, Ki-Won
    Ahn, Sang-Il
    Na, Kyoung-Il
    Ha, Jong-Bong
    Kwon, Dae-Hyuk
    Hahn, Cheol-Koo
    Hahm, Sung-Ho
    Choi, Hyun-Chul
    Lee, Jung-Hee
    Japanese Journal of Applied Physics, 2008, 47 (4 PART 2): : 2824 - 2827
  • [46] Enhanced electrical characteristics of AlGaN/GaN heterostructure field-effect transistor with p-GaN back barriers and si delta-doped layer
    Lee, Hwa-Chul
    Hyun, Sun-Young
    Cho, Hyun-Ick
    Ostermaier, Clemens
    Kim, Ki-Won
    Ahn, Sang-Il
    Na, Kyoung-Il
    Ha, Jong-Bong
    Kwon, Dae-Hyuk
    Hahn, Cheol-Koo
    Hahm, Sung-Ho
    Choi, Hyun-Chul
    Lee, Jung-Hee
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2824 - 2827
  • [47] Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics
    Kumar, Mohit
    Xu, Laurent
    Labau, Timothee
    Biscarrat, Jerome
    Torrengo, Simona
    Charles, Matthew
    Lecouvey, Christophe
    Olivier, Aurelien
    Zgheib, Joelle
    Escoffier, Rene
    Buckley, Julien
    CRYSTALS, 2025, 15 (01)
  • [48] Nitrogen and Chlorine Co-Doped Carbon Dots with Yellow-Green Emission as a Ratiometric Fluorescent and Colorimetric Dual-Signal Probe for Quercetin Detection and Cell Imaging
    Liu, Fang
    Zhu, Changjian
    Wang, Xin
    Zhang, Yong
    NANO, 2024, 19 (04)
  • [49] Effect of impurity incorporation on emission wavelength in cathodoluminescence spectrum image study of GaN pyramids grown by selective area epitaxy
    Song, D. Y.
    Chandolu, A.
    Stojanovic, N.
    Nikishin, S. A.
    Holtz, M.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (06)
  • [50] Effect of thermal annealing induced by p-type layer growth on blue and green LED performance
    Lee, W
    Limb, J
    Ryou, JH
    Yoo, D
    Chung, T
    Dupuis, RD
    JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) : 577 - 581
12345