Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers

被引:0
|
作者
Fischer, David Dustin [1 ]
Knaut, Martin [1 ]
Reif, Johanna [1 ]
Nehm, Frederik [2 ]
Albert, Matthias [1 ]
Bartha, Johann W. [1 ]
机构
[1] Institute of Semiconductors and Microsystems, Technische Universität Dresden, Dresden,01062, Germany
[2] Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Institute for Applied Physics, Technische Universität Dresden, Dresden,01062, Germany
关键词
Capacitive coupled plasmas - Deposition temperatures - Electrical measurement - Fabrication temperature - Polyethylene naphthalate - Scanning electron microscopy image - Water vapor transmission rate - X ray photoemission spectroscopy;
D O I
暂无
中图分类号
学科分类号
摘要
40
引用
收藏
相关论文
共 50 条
  • [21] Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
    Yun, Eun-Young
    Lee, Woo-Jae
    Wang, Qi Min
    Kwon, Se-Hun
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2017, 33 (03) : 295 - 299
  • [22] Characteristics of aluminum silicate films grown by plasma-enhanced atomic layer deposition
    Lim, JW
    Yun, SJ
    Lee, JH
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2005, 8 (09) : F25 - F28
  • [23] GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
    Bosund, M.
    Mattila, P.
    Aierken, A.
    Hakkarainen, T.
    Koskenvaara, H.
    Sopanen, M.
    Airaksinen, V-M
    Lipsanen, H.
    APPLIED SURFACE SCIENCE, 2010, 256 (24) : 7434 - 7437
  • [24] Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
    Park, Jae-Min
    Jang, Se Jin
    Yusup, Luchana L.
    Lee, Won Jun
    Lee, Sang-Ick
    ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (32) : 20865 - 20871
  • [25] In Situ Infrared Absorption Study of Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride
    Pena, Luis Fabian
    Mattson, Eric C.
    Nanayakkara, Charith E.
    Oyekan, Kolade A.
    Mallikarjunan, Anupama
    Chandra, Haripin
    Xiao, Manchao
    Lei, Xinjian
    Pearlstein, Ronald M.
    Derecskei-Kovacs, Agnes
    Chabal, Yves J.
    LANGMUIR, 2018, 34 (08) : 2619 - 2629
  • [26] Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane
    Meng, Xin
    Kim, Harrison Sejoon
    Lucero, Antonio T.
    Hwang, Su Min
    Lee, Joy S.
    Byun, Young-Chul
    Kim, Jiyoung
    Hwang, Byung Keun
    Zhou, Xiaobing
    Young, Jeanette
    Telgenhoff, Michael
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (16) : 14116 - 14123
  • [27] Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
    Hoffmann, Lukas
    Theirich, Detlef
    Hasselmann, Tim
    Raeupke, Andre
    Schlamm, Daniel
    Riedl, Thomas
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2016, 34 (01):
  • [28] Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
    Tarala, V.
    Ambartsumov, M.
    Altakhov, A.
    Martens, V.
    Shevchenko, M.
    JOURNAL OF CRYSTAL GROWTH, 2016, 455 : 157 - 160
  • [29] Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches
    Jaffal, Moustapha
    Yeghoyan, Taguhi
    Lefevre, Gauthier
    Gassilloud, Remy
    Posseme, Nicolas
    Vallee, Christophe
    Bonvalot, Marceline
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (03):
  • [30] Scalability of RuTiN barriers deposited by plasma-enhanced atomic layer deposition for advanced interconnects
    Swerts, Johan
    Siew, Yong-Kong
    Van Besien, Els
    Barbarin, Yohan
    Opsomer, Karl
    Bommels, Jurgen
    Tokei, Zsolt
    Van Elshocht, Sven
    MICROELECTRONIC ENGINEERING, 2014, 120 : 235 - 239