Valence band offset of ReS2/BN heterojunction measured by X-ray photoelectron spectroscopy

被引：0
|
作者：
Huang, Heyuan [1 ]
Yang, Wenge [1 ]
Xing, Shu'an [1 ]
Zhao, Guijuan [1 ]
Li, Xunshuan [1 ]
Liu, Guipeng [1 ]
Yang, Jianhong [1 ]
机构：
[1] School of Physical Science and Technology, Lanzhou University, Lanzhou,Gansu,730000, China
来源：
Physics Letters, Section A: General, Atomic and Solid State Physics | 2021年 / 392卷
关键词：
37;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy
    Zhang, Riqing
    Zhang, Panfeng
    Kang, Tingting
    Fan, Haibo
    Liu, Xianglin
    Yang, Shaoyan
    Wei, Hongyuan
    Zhu, Qinsheng
    Wang, Zhanguo
    APPLIED PHYSICS LETTERS, 2007, 91 (16)
  • [22] Valence band offset of ZnO/Zn0.85Mg0.15O heterojunction measured by x-ray photoelectron spectroscopy
    Su, S. C.
    Lu, Y. M.
    Zhang, Z. Z.
    Shan, C. X.
    Li, B. H.
    Shen, D. Z.
    Yao, B.
    Zhang, J. Y.
    Zhao, D. X.
    Fan, X. W.
    APPLIED PHYSICS LETTERS, 2008, 93 (08)
  • [23] Valence-band offset of p-NiO/n-ZnO heterojunction measured by X-ray photoelectron spectroscopy
    Yang, Zhi-Guo
    Zhu, Li-Ping
    Guo, Yan-Min
    Tian, Wei
    Ye, Zhi-Zhen
    Zhao, Bing-Hui
    PHYSICS LETTERS A, 2011, 375 (16) : 1760 - 1763
  • [24] Valence band offset of n-ZnO/p-MgxNi1-xO heterojunction measured by x-ray photoelectron spectroscopy
    Guo, Y. M.
    Zhu, L. P.
    Jiang, J.
    Hu, L.
    Ye, C. L.
    Ye, Z. Z.
    APPLIED PHYSICS LETTERS, 2012, 101 (05)
  • [25] ZnSe/ZnSxSe1-x heterojunction valence band discontinuity measured by x-ray photoelectron spectroscopy
    Sporken, R
    Abuel-Rub, KM
    Chen, YP
    Sivananthan, S
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) : 776 - 781
  • [26] ZnSe/ZnSxSe1−x heterojunction valence band discontinuity measured by x-ray photoelectron spectroscopy
    R. Sporken
    Khaled M. Abuel-Rub
    Y. P. Chen
    S. Sivananthan
    Journal of Electronic Materials, 1998, 27 : 776 - 781
  • [27] Experimental determination of valence band offset at PbTe/CdTe(111) heterojunction interface by x-ray photoelectron spectroscopy
    Si, Jianxiao
    Jin, Shuqiang
    Zhang, Hanjie
    Zhu, Ping
    Qiu, Dongjiang
    Wu, Huizhen
    APPLIED PHYSICS LETTERS, 2008, 93 (20)
  • [28] Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spectroscopy
    Li, Y. F.
    Yao, B.
    Lu, Y. M.
    Li, B. H.
    Gai, Y. Q.
    Cong, C. X.
    Zhang, Z. Z.
    Zhao, D. X.
    Zhang, J. Y.
    Shen, D. Z.
    Fan, X. W.
    APPLIED PHYSICS LETTERS, 2008, 92 (19)
  • [29] Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
    K Shi
    DB Li
    HP Song
    Y Guo
    J Wang
    XQ Xu
    JM Liu
    AL Yang
    HY Wei
    B Zhang
    SY Yang
    XL Liu
    QS Zhu
    ZG Wang
    Nanoscale Res Lett, 6
  • [30] Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
    Shi, K.
    Li, D. B.
    Song, H. P.
    Guo, Y.
    Wang, J.
    Xu, X. Q.
    Liu, J. M.
    Yang, A. L.
    Wei, H. Y.
    Zhang, B.
    Yang, S. Y.
    Liu, X. L.
    Zhu, Q. S.
    Wang, Z. G.
    NANOSCALE RESEARCH LETTERS, 2011, 6 : 1 - 5
12345