Quantum-well resonances caused by partial confinement in MgO-based magnetic tunnel junctions

被引：1
|
作者：
Jiang, L. N. [1 ]
Chi, B. Y. [1 ,2 ]
Chen, W. Z. [3 ,4 ]
Han, X. F. [1 ,2 ,5 ]
机构：
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Beijing Normal Univ, Ctr Adv Quantum Studies, Beijing 100875, Peoples R China
[4] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
[5] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
来源：
PHYSICAL REVIEW B | 2024年 / 110卷 / 09期
关键词：
ROOM-TEMPERATURE; MAGNETORESISTANCE; CRYSTAL; SINGLE; STATES;
D O I：
10.1103/PhysRevB.110.094428
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Quantum-well resonance is achieved through partial confinement in magnetic tunnel junctions (MTJs), which provides an additional operable degree of freedom to regulate quantum-well levels. Using Al/Fe/MgO/Fe/Al and Ag/Al/Fe/MgO/Fe/Al/Ag MTJs as examples, via first-principles calculations, we demonstrate that the partial confinement of Delta(1) electrons at the Al/Fe interface, and the full confinement at the Fe/MgO interface combine to produce quantum-well resonances in Fe. The quantum-well levels of Fe can be periodically adjusted by two degrees of freedom: Fe and Al thickness. The oscillation period obtained from conductance G(up arrow up arrow) of MTJs is 2.13 ML Fe (9 ML Al), close to 2.25 ML Fe (8.33 ML Al) calculated by Fermi wave vector in the bcc-Fe (fcc-Al) band. The combination of long and short periods enables quantum-well levels to be finely adjusted. An ultrahigh optimistic TMR effect of 3.05x10(5)% is achieved. Our results provide a way for designing high-performance spintronics devices.
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页数：6
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