p-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors

被引：0

作者：

Strobel, Carsten ^{[1
]}

Chavarin, Carlos Alvarado ^{[2
]}

Knaut, Martin ^{[1
]}

Albert, Matthias ^{[1
]}

Heinzig, Andre ^{[1
]}

Gummadi, Likhith ^{[1
]}

Wenger, Christian ^{[2
,3
]}

Mikolajick, Thomas ^{[1
]}

机构：

[1] Tech Univ Dresden, Inst Semicond & Microsyst, Chair Nanoelect, Nothnitzer Str 64, D-01187 Dresden, Germany

[2] IHP Leibniz Inst Innovat Mikroelekt, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

[3] Brandenburg Univ Technol Cottbus Senftenberg, Pl Deutsch Einheit 1, D-03046 Cottbus, Germany

来源：

NANOMATERIALS | 2024年 / 14卷 / 13期

关键词：

phototransistor; GABT; graphene; p-type; silicon; germanium; high responsivity; high speed; dual-band; photodetection;

D O I：

10.3390/nano14131140

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The graphene adjustable-barriers phototransistor is an attractive novel device for potential high speed and high responsivity dual-band photodetection. In this device, graphene is embedded between the semiconductors silicon and germanium. Both n-type and p-type Schottky contacts between graphene and the semiconductors are required for this device. While n-type Schottky contacts are widely investigated, reports about p-type Schottky contacts between graphene and the two involved semiconductors are scarce. In this study, we demonstrate a p-type Schottky contact between graphene and p-germanium. A clear rectification with on-off ratios of close to 103 (+/- 5 V) and a distinct photoresponse at telecommunication wavelengths in the infrared are achieved. Further, p-type silicon is transferred to or deposited on graphene, and we also observe rectification and photoresponse in the visible range for some of these p-type Schottky junctions. These results are an important step toward the realization of functional graphene adjustable-barrier phototransistors.

引用

页数：15

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