Hydrogen permeation through uniaxially strained SiOx barrier thin films photochemically prepared on PET foil substrates

被引：2

作者：

With, P. C. ^{[1
]}

Proehl, T. ^{[1
]}

Gerlach, J. W. ^{[1
]}

Prager, A. ^{[1
]}

Konrad, A. ^{[2
]}

Arena, F. ^{[2
]}

Helmstedt, U. ^{[1
]}

机构：

[1] Leibniz Inst Surface Engn IOM, Permoserstr 15, D-04318 Leipzig, Germany

[2] Mecadi GmbH, Kolling 145, D-66450 Bexbach, Germany

来源：

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2024年 / 81卷

关键词：

Hydrogen permeation; Gas barrier film; Photochemistry; Film elongation; Film stress; Photoconversion; IRRADIATION; DIFFUSION; MEMBRANES;

D O I：

10.1016/j.ijhydene.2024.07.249

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hydrogen permeation through uniaxially strained thin SiOx x based gas barrier films, formed at room temperature and ambient pressure on PET foil substrates by UV photochemical conversion (Photoconversion), was investigated using a dedicated measurement system. Hydrogen permeation measurements were conducted as a function of the stack of laminated single SiOx x barrier films, of the sample temperature as well as of the uniaxial mechanical strain applied to the samples. The results demonstrate a significant overall improvement of the hydrogen barrier properties for both single SiOx x barrier films on PET and laminated single SiOx x barrier films on PET. In the case of strained samples, the hydrogen barrier properties deteriorate due to stress-induced crack formation in the barrier films. This deterioration is strongest for strained single SiOx x barrier films but can be substantially reduced by laminating single SiOx x barrier films.

引用

页码：405 / 410

页数：6

共 23 条

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[22] Influence of ZnO buffer layers on the optoelectronic properties in Ga-doped ZnO thin films prepared by RF magnetron sputtering on PET substrates
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[23] Stiff and Transparent Multilayer Thin Films Prepared Through Hydrogen-Bonding Layer-by-Layer Assembly of Graphene and Polymer
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