Laser Patterning for 2D Lateral and Vertical VS2/MoS2 Metal/Semiconducting Heterostructures

2D metal/semiconducting heterostructures have attracted extensive attention for potential applications in future electronic and optoelectronic devices. However, the simple and fast preparation of patterned metal/semiconducting heterostructures with controllable channel lengths still faces challenges. Here, a simple and reliable laser patterning method for preparing patterned lateral/vertical 1T/2H VS2/MoS2 metal/semiconducting heterostructures is reported. Specifically, site-selective etching of VS2 can be realized through the combination of laser radiation and acid solution etching. Further, pre-patterned VS2 nanoplates with edge dangling bonds can offer effective nucleation points for the lateral epitaxial growth of MoS2, thus generating patterned VS2-MoS2 lateral heterostructures. The laser processing method can further be used to create patterned VS2/MoS2 vertical van der Waals (vdWHs), which can only selectively etch the upper layer VS2 while maintaining the intrinsic structure of the bottom layer MoS2. The obtained patterned VS2/MoS2 vdWHs show a similar channel length of approximate to 420 nm, and the VS2 vdW contact MoS2 transistor is fabricated, delivering an On-state current of 4.01 mu A/mu m, and carrier mobility of 3.56 cm(2) s(-1) V-1. This approach is also general for preparing patterned VSe2, VSe2/WSe2 heterostructures.