How we made the 1,000 V silicon carbide Schottky diode

被引：0
|
作者：
Kimoto, Tsunenobu [1 ]
机构：
[1] Kyoto Univ, Kyoto, Japan
来源：
NATURE ELECTRONICS | 2024年
关键词：
D O I：
10.1038/s41928-024-01252-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon carbide power devices are an important component in a variety of technologies. Tsunenobu Kimoto recounts how the first 1 kV silicon carbide Schottky diodes were created.
引用
收藏
页码：933 / 933
页数：1
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