Exploring Novel Ba2MBiO6 (M = Sm, Tb) Oxide Double Perovskites Employing DFT

被引:11
|
作者
Sfina, Nourreddine [1 ]
Rahman, Nasir [2 ]
Belhachi, Soufyane [3 ,4 ]
Husain, Mudasser [5 ]
Al-Khamiseh, Bashar M. [6 ]
Abualnaja, Khamael M. [7 ]
Alosaimi, Ghaida [7 ]
Azzouz-Rached, Ahmed [8 ]
Ullah, Saeed [9 ]
Rashid, Amin Ur [10 ]
Khan, Rajwali [2 ,11 ]
机构
[1] King Khalid Univ, Coll Sci & Arts Mahayel Asir, Dept Phys, Abha, Saudi Arabia
[2] Univ Lakki Marwat, Dept Phys, Lakki Marwat 28420, KPK, Pakistan
[3] Univ Ctr Naama, Artificial Intelligence Lab Mech & Civil Struct &, POB 66, Naama 45000, Algeria
[4] Univ Ctr Salhi Ahmed Naama, Inst Technol, POB 66, Naama 45000, Algeria
[5] Peking Univ, Dept Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[6] Middle East Univ, MEU Res Unit, Amman, Jordan
[7] Taif Univ, Fac Sci, Dept Chem, Taif 21944, Saudi Arabia
[8] Djillali Liabes Univ Sidi Bel Abbes, Fac Exact Sci, Magnet Mat Lab, Sidi Bel Abbes, Algeria
[9] Univ Buner, Dept Phys, Buner 19290, KP, Pakistan
[10] Univ Swat, Dept Appl Phys & Mat Sci, Swat 19200, Pakistan
[11] United Arab Emirates Univ, Dept Phys, Abu Dhbai 15551, U Arab Emirates
关键词
DFT; Double perovskites; TB-mBJ; Structural; Elastic and optoelectronic properties; TRANSPORT-PROPERTIES; ELECTRONIC-STRUCTURE;
D O I
10.1007/s10904-024-03242-w
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
In the present work, we investigate the structural, elastic, optical, and electronic properties of Ba2MBiO6 (M = Sm, Tb) oxide double perovskites, using Density Functional Theory within the Wien2k The generalized gradient approximation GGA for structural and elastic properties while the Tran-Blaha modified Becke-Johnson Tb-mBJ is employed for both optical and electrical properties. The Birch-Murnaghan equations of state and tolerance factors are used to verify the structural stability of both compounds. It is determined that both systems are elastically stable and have anisotropic ductile and ionic bonding behavior. The Ba2SmBiO6 is a non-central force crystal nu = 0.51 as with Ba2TbBiO6 a central force crystal nu = 0.29. Finally, as a potential candidate for spintronic applications, Ba2SmBiO6 shows half-metallic behavior exhibiting spin-dependent band gaps. Ba2TbBiO6 behaves as a direct band gap semiconductor with a 1.79 eV band gap. Both compounds have optical properties in the UV-visible region, indicating potential for optoelectronic applications.
引用
收藏
页码:6102 / 6113
页数:12
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