Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction

被引:0
|
作者
Zeng, Hui [1 ]
Wang, Weimin [2 ]
Ivanov, Ivan G. [1 ]
Darakchieva, Vanya [1 ,3 ]
Sun, Jianwu [1 ]
机构
[1] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden
[2] MAX IV Lab, Fotongatan 2, SE-22484 Lund, Sweden
[3] Lund Univ, NanoLund & Solid State Phys, S-22100 Lund, Sweden
基金
瑞典研究理事会;
关键词
CO3O4; GROWTH;
D O I
10.1063/5.0226900
中图分类号
O59 [应用物理学];
学科分类号
摘要
The band offsets of semiconductor heterojunctions are critical parameters for the design of electronic and optoelectronic devices. In this work, we report the fabrication of a Co3O4/3C-SiC p-n heterojunction and the determination of the conduction band and valence band offsets at the Co3O4/3C-SiC heterojunction. Our results reveal that the Co3O4/3C-SiC p-n heterojunction exhibits a type-II band alignment, with a conduction band offset of 0.75 eV and a valence band offset of 0.96 eV. These experimental findings are crucial for the design and development of 3C-SiC devices for electronic and optoelectronic applications.
引用
收藏
页数:6
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