Fowler-Nordheim Tunneling Induced Charge Transfer Plasmons between Nearly Touching Nanoparticles

被引:112
|
作者
Wu, Lin [1 ]
Duan, Huigao [2 ]
Bai, Ping [1 ]
Bosman, Michel [2 ]
Yang, Joel K. W. [2 ]
Li, Erping [1 ,3 ]
机构
[1] ASTAR, Inst High Performance Comp, Singapore 138632, Singapore
[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore
[3] Zhejiang Univ, Dept Informat Sci & Elect Engn, Hangzhou 310058, Zhejiang, Peoples R China
基金
新加坡国家研究基金会;
关键词
quantum plasmonics; charge transfer plasmons; nearly touching nanoparticles; direct tunneling; Fowler-Nordheim tunneling; FIELD ENHANCEMENT; QUANTUM; TIME;
D O I
10.1021/nn304970v
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Reducing the gap between two metal nanoparticles down to atomic dimensions uncovers novel plasmon resonant modes. Of particular interest is a mode known as the charge transfer plasmon (CTP). This mode has been experimentally observed in touching nanoparticles, where charges can shuttle between the nanoparticles via a conductive path. However, the CTP mode for nearly touching nanoparticles has only been predicted theoretically to occur via direct tunneling when the gap is reduced to similar to 0.4 nm. Because of challenges in fabricating and characterizing gaps at these dimensions, experiments have been unable to provide evidence for this plasmon mode that is supported by tunneling. In this work, we consider an alternative tunneling process, that is, the well-known Fowler-Nordheim (FN) tunneling that occurs at high electric fields, and apply It for the first time In the theoretical investigation of plasmon resonances between neatly touching nanoparticles. This new approach relaxes the requirements on gap dimensions, and Intuitively suggests that with a sufficiently high-Intensity Irradiation, the CTP can be excited via FN tunneling for a range of subnanometer gaps. The unique feature of FN tunneling Induced CTP Is the ability to turn on and off the charge transfer by varying the intensity of an external light source, and this could Inspire the development of novel quantum devices.
引用
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页码:707 / 716
页数:10
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