Preparation of Nd-Fe-B Films via a Low-Temperature Process

被引:1
|
作者
Nakano, M. [1 ]
Higashi, K. [1 ]
Tahara, G. [1 ]
Fukuda, I. [1 ]
Yamashita, A. [1 ]
Yanai, T. [1 ]
Nagai, K. [2 ]
Shinshi, T. [2 ]
Fukunaga, H. [1 ]
机构
[1] Nagasaki Univ, Grad Sch Engn, Nagasaki 8528521, Japan
[2] Inst Innovat Res, Tokyo Inst Technol, Lab Future Interdisciplinary Res Sci & Technol, Yokohama 2268503, Japan
关键词
Laser-induced forward transfer (LIFT); low-temperature process; microelectromechanical systems; Nd-Fe-B films; MAGNETS;
D O I
10.1109/TMAG.2024.3401157
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Despite reports of sputtering-fabricated Nd-Fe-B films having outstanding magnetic properties, the films necessitate an annealing process that includes substrate heating and/or post-annealing. This research prepares Nd-Fe-B films using a low-temperature process. Specifically, we used a laser-induced forward-transfer (LIFT) technique that employs Nd-Fe-B thick films fabricated using pulsed laser deposition (PLD). LIFT-made films with a dotted pattern could be obtained by using an optical shatter and Galvano scanner. We could succeed in transferring Nd2Fe14B phase from a target to a LIFT-made film, and films with coercivity exceeding 200 kA/m could be successfully prepared without an annealing process.
引用
收藏
页码:1 / 1
页数:4
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