Cr and Mn doping AgNbO3 3 for high Curie temperature ferromagnetic half-metals
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作者:
Elkhou, A.
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Mohammed V Univ Rabat, Fac Sci, LPHE MS, Rabat, Morocco
Mohammed V Univ Rabat, Fac Sci, CPM Ctr Phys & Math, MB 1014 RP, Rabat, MoroccoMohammed V Univ Rabat, Fac Sci, LPHE MS, Rabat, Morocco
Elkhou, A.
[1
,2
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Drissi, L. B.
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Mohammed V Univ Rabat, Fac Sci, LPHE MS, Rabat, Morocco
Mohammed V Univ Rabat, Fac Sci, CPM Ctr Phys & Math, MB 1014 RP, Rabat, Morocco
Hassan II Acad Sci & Technol, Coll Phys & Chem Sci, Rabat, MoroccoMohammed V Univ Rabat, Fac Sci, LPHE MS, Rabat, Morocco
Drissi, L. B.
[1
,2
,3
]
Assad, R.
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Mohammed V Univ Rabat, Fac Sci, LPHE MS, Rabat, Morocco
Natl Ctr Sci & Tech Res CNRST, Rabat, MoroccoMohammed V Univ Rabat, Fac Sci, LPHE MS, Rabat, Morocco
Assad, R.
[1
,4
]
机构:
[1] Mohammed V Univ Rabat, Fac Sci, LPHE MS, Rabat, Morocco
[2] Mohammed V Univ Rabat, Fac Sci, CPM Ctr Phys & Math, MB 1014 RP, Rabat, Morocco
The alterations in the electronic and magnetic properties of AgNbO3 3 induced by Cr and Mn doping at two concentrations (6% and 14%) are investigated within the framework of density functional theory (DFT), both with and without the Hubbard correction (U) as well as HSE method. Half-metallic ferromagnetic behavior with 100% polarization is observed for all dopants. Double exchange coupling is the mechanism responsible for the ferromagnetic interaction in these materials. Our results also indicates that the correction with U-term and HSE method provide consistent values that closely align with experimental measurements, and significantly improve the standard DFT description. Finally, the value of the Curie temperature, which reaches 425.49 (K), exceeds the ambient temperature, revealing the potential use of this doped material for new spintronic devices.
机构:
Hebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Hebei Normal Univ, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R ChinaHebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Yao, Xiaojing
Lian, Huijie
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Hebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Hebei Normal Univ, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R ChinaHebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Lian, Huijie
Lu, Jinlian
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Yancheng Inst Technol, Dept Phys, Yancheng 224051, Jiangsu, Peoples R ChinaHebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Lu, Jinlian
Zhao, Xinli
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Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R ChinaHebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China
Zhao, Xinli
Zhang, Xiuyun
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Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R ChinaHebei Normal Univ, Coll Phys, Shijiazhuang 050024, Peoples R China