Full Picture of Lattice Deformation in a Ge1 - xSnx Micro-Disk by 5D X-ray Diffraction Microscopy

被引:2
|
作者
Corley-Wiciak, Cedric [1 ]
Zoellner, Marvin H. [2 ]
Corley-Wiciak, Agnieszka A. [2 ,3 ]
Rovaris, Fabrizio [4 ,5 ]
Zatterin, Edoardo [1 ]
Zaitsev, Ignatii [2 ]
Sfuncia, Gianfranco [6 ]
Nicotra, Giuseppe [6 ]
Spirito, Davide [2 ]
von den Driesch, Nils [7 ,8 ]
Manganelli, Costanza L. [2 ]
Marzegalli, Anna [4 ,5 ]
Schulli, Tobias U. [1 ]
Buca, Dan [8 ,9 ]
Montalenti, Francesco [4 ,5 ]
Capellini, Giovanni [2 ,10 ]
Richter, Carsten [11 ]
机构
[1] European Synchrotron Radiat Facil, 71 Ave Martyrs,CS 40220, F-38043 Grenoble 9, France
[2] Leibniz Inst Innovat Mikroelekt, Technol Pk 25, D-15236 Frankfurt, Oder, Germany
[3] Rhein Westfal TH Aachen, D-52062 Aachen, Germany
[4] Univ Milano Bicocca, L NESS, Via Roberto Cozzi 55, I-20125 Milan, Italy
[5] Univ Milano Bicocca, Dept Mat Sci, Via Roberto Cozzi 55, I-20125 Milan, Italy
[6] CNR IMM, Zona Ind Str 8, I-95121 Catania, Italy
[7] Forschungszentrum Julich, Peter Grunberg Inst PGI 10, D-52425 Julich, Germany
[8] Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany
[9] Forschungszentrum Julich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany
[10] Univ Roma Tre, Dipartimento Sci, I-00146 Rome, Italy
[11] IKZ Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin, Germany
来源
SMALL METHODS | 2024年 / 8卷 / 12期
关键词
3D microstructures; GeSn; lattice strain; X-ray nanoprobe; STRAIN RELAXATION; SILICON; DEFECT; RATIO;
D O I
10.1002/smtd.202400598
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Lattice strain in crystals can be exploited to effectively tune their physical properties. In microscopic structures, experimental access to the full strain tensor with spatial resolution at the (sub-)micrometer scale is at the same time very interesting and challenging. In this work, how scanning X-ray diffraction microscopy, an emerging model-free method based on synchrotron radiation, can shed light on the complex, anisotropic deformation landscape within three dimensional (3D) microstructures is shown. This technique allows the reconstruction of all lattice parameters within any type of crystal with submicron spatial resolution and requires no sample preparation. Consequently, the local state of deformation can be fully quantified. Exploiting this capability, all components of the strain tensor in a suspended, strained Ge1 - xSnx /Ge microdisk are mapped. Subtle elastic deformations are unambiguously correlated with structural defects, 3D microstructure geometry, and chemical variations, as verified by comparison with complementary electron microscopy and finite element simulations. The methodology described here is applicable to a wide range of fields, from bioengineering to metallurgy and semiconductor research.
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页数:13
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