La implanted band engineering of ZnO nanorods for enhanced photoelectrochemical water splitting performance

In the quest to improve photoelectrochemical water-splitting performance, we have doped lanthanum (La) in highly crystalline zinc oxide (ZnO) nanorods (NRs) using a facile and low-temperature hydrothermal route and successful substitution of La3+ at the Zn2+ site is confirmed from structural and chemical analysis. The tapered NRs morphology gained after La doping resulted in lower optical bandgap of 3.17 eV, enhanced visible light trapping, and multiphoton absorption, which assist in achieving good PEC activity. The La doping also offered higher Urbach energy (E-U), subsidizing the number of oxygen vacancies. The UPS spectra show that La doping reduces conduction band energy level and endorses smooth charge transportation. The La-doped ZnO exhibits two times enhancement in photocurrent (1.54 mA<middle dot>cm(-2)) compared to pristine ZnO (0.81 mA<middle dot>cm(-2)). The higher applied bias to the photon conversion efficiency of similar to 1.14% for La-doped ZnO confirms the efficient utilization of solar energy. The EIS measurements demonstrated reduction in charge transfer resistance with La-doping. Mott-Schottky analysis shows that La doping lowers the flat-band potential and enhances charge transportation, making it a potential photoanode for PEC water-splitting applications.