Fully vertical AlN-on-SiC Schottky barrier diodes

被引：0

作者：

Okumura, Hironori ^{[1
]}

Imura, Masataka ^{[2
]}

Miyazawa, Fuga ^{[1
]}

Mainini, Lorenzo ^{[1
,3
]}

机构：

[1] Univ Tsukuba, Inst Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050044, Japan

[3] Politecn Milan, Dept Chem Mat & Chem Engn, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 10期

关键词：

vertical device; AlN; SBD; MOCVD; leakage current; hetero epitaxial layer; PARASITIC REACTION; ALUMINUM NITRIDE; GROWTH; TEMPLATES; EPITAXY; SI(111); LAYER; MOVPE;

D O I：

10.35848/1347-4065/ad7dc3

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated fully vertical Schottky barrier diodes (SBDs) that have a Si-doped AlN drift layer directly grown on an n-type 4H-SiC substrate by metal-organic CVD. The AlN SBD with a Ni anode showed a clear rectifying characteristic at 300-500 K and a rectification ratio of about 10-2. We found that the leakage current of the vertical AlN-on-SiC devices is affected by defects in the AlN drift layer and Schottky interface.

引用

页数：5

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