Topological materials with nontrivial spin structure have received considerable attention because they exhibit varieties of novel quantum phenomena. Here, we report a combined experimental and theoretical study of magnetic and magnetotransport properties of EuAuSb, an itinerant antiferromagnet with low N & eacute;el temperature, TN N 3.5 K. The concomitant change in the field and temperature dependence of the electrical resistivity and that of the magnetization suggest that the charge conduction mechanism in EuAuSb is strongly influenced by the spin configuration of the Eu. Below T N , both longitudinal magnetoresistance (LMR) and transverse magnetoresistance (TMR) are large and positive at low fields, but negative at high fields. TMR becomes positive above 20 K, while LMR remains negative up to the highest measured temperature of 100 K. The negative LMR well above the TN N is attributed to the chiral anomaly associated with the Weyl fermion state, while the low-field positive LMR and TMR are due to the weak antilocalization (WAL) effect. The WAL effect in TMR can be described well by the Hikami-Larkin-Nagaoka model, while the WAL effect in LMR is explained using the generalized Altshuler-Aronov model. The Hall resistivity indicates that holes are the majority charge carriers in EuAuSb with concentration 1020 20 cm-3 - 3 and mobility 103 3 cm2 2 V - 1 s-1 - 1 (at 2 K). The Shubnikov-de Haas oscillation in TMR has been analyzed to determine several important physical parameters related to the Fermi surface of EuAuSb. The detailed analysis unveils the large topological Hall effect, which is attributed to the presence of Weyl fermions and complex magnetic ordering, as confirmed by the ab initio simulation. Our theoretical calculations reveal topologically nontrivial surface Fermi arcs and suggest competition among various low-energy magnetic phases, including an altermagnetic phase, mediated by specific crystalline symmetry present in EuAuSb.
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Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USAPenn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA
Liu, Chao-Xing
Ye, Peng
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Univ Illinois, Dept Phys, Urbana, IL 61801 USA
Univ Illinois, Inst Condensed Matter Theory, Urbana, IL 61801 USAPenn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA
Ye, Peng
Qi, Xiao-Liang
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Univ Illinois, Dept Phys, Urbana, IL 61801 USA
Univ Illinois, Inst Condensed Matter Theory, Urbana, IL 61801 USA
Stanford Univ, Dept Phys, Stanford, CA 94305 USAPenn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA
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Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
Anyang Normal Univ, Sch Phys, Anyang 455000, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
Bai, Chunxu
Yang, Yanling
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Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
Yang, Yanling
Chang, Kai
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Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
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Russian Acad Sci, Vereshchagin Inst High Pressure Phys, Moscow 108840, Russia
Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, RussiaRussian Acad Sci, Vereshchagin Inst High Pressure Phys, Moscow 108840, Russia
Chtchelkatchev, Nikolay M.
Berman, Oleg L.
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CUNY, New York City Coll Technol, Brooklyn, NY 11201 USA
CUNY, Grad Sch, New York, NY 10016 USA
CUNY, Univ Ctr, New York, NY 10016 USARussian Acad Sci, Vereshchagin Inst High Pressure Phys, Moscow 108840, Russia
Berman, Oleg L.
Kezerashvili, Roman Ya
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CUNY, New York City Coll Technol, Brooklyn, NY 11201 USA
CUNY, Grad Sch, New York, NY 10016 USA
CUNY, Univ Ctr, New York, NY 10016 USARussian Acad Sci, Vereshchagin Inst High Pressure Phys, Moscow 108840, Russia
Kezerashvili, Roman Ya
Lozovik, Yurii E.
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Russian Acad Sci, Inst Spect, Moscow 108840, Russia
Natl Res Univ Higher Sch Econ, MIEM, Moscow, RussiaRussian Acad Sci, Vereshchagin Inst High Pressure Phys, Moscow 108840, Russia