A Linearity-Enhanced mm-Wave GaN MMIC Power Amplifier with Inter-Stage AM/AM Compensation and AM/PM Cancellation

被引：0

作者：

Liu, Ruijia ^{[1
]}

Veisee, Soroush ^{[1
]}

Jia, Haoyang ^{[1
]}

Zhu, Anding ^{[1
]}

机构：

[1] Univ Coll Dublin, Sch Elect & Elect Engn, Dublin, Ireland

来源：

2024 25TH INTERNATIONAL MICROWAVE AND RADAR CONFERENCE, MIKON 2024 | 2024年

基金：

爱尔兰科学基金会;

关键词：

Amplitude distortion; Gallium Nitride; monolithic microwave integrated circuit; phase distortion; power amplifier; EFFICIENCY;

D O I：

10.23919/MIKON60251.2024.10633933

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a linearity enhanced millimeter-wave (mm-wave) Gallium Nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier (PA) is presented. The linearity of the proposed amplifier is improved by using the amplitude to amplitude modulation (AM/AM) distortion compensation and the amplitude to phase modulation (AM/PM) distortion cancellation between the driver-stage and the power-stage transistors. For proof of concept, a 26-to-28-GHz GaN MMIC PA was designed using a 120-nm GaN on silicon carbide high electron mobility transistor process. The fabricated amplifier achieves a saturated power of around 30 dBm, with the AM/AM distortion of less than 3-dB and the AM/PM distortion of smaller than 5. from 26 to 28 GHz. The corresponding power-added efficiency (PAE) at saturation is 32.3%-35%.

引用

页码：37 / 41

页数：5

共 40 条

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