Tilted-chiral-state-induced topological Hall effect in chiral magnetic soliton host Cr1/3TaS2

被引:0
|
作者
Du, Zan [1 ]
Liu, Wei [3 ]
Wang, Aina [1 ,2 ]
Rahman, Azizur [2 ]
Han, Yuyan [1 ,4 ]
Tong, Wei [1 ,4 ]
Fan, Jiyu [5 ]
Ma, Chunlan [6 ]
Ge, Min [7 ]
Pi, Li [1 ,4 ,7 ]
Zhang, Yuheng [1 ,4 ,7 ]
Qu, Zhe [1 ,4 ]
Zhang, Lei [1 ,4 ]
机构
[1] Chinese Acad Sci, Hefei Inst Phys Sci, Anhui Key Lab Low Energy Quantum Mat & Devices, High Magnet Field Lab, Hefei 230031, Peoples R China
[2] Univ Sci & Technol China, Hefei 230026, Peoples R China
[3] Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China
[4] High Magnet Field Lab Anhui Prov, Hefei 230031, Peoples R China
[5] Nanjing Univ Aeronaut & Astronaut, Dept Appl Phys, Nanjing 211106, Peoples R China
[6] Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heat Fluid Flow Techn, Suzhou 215009, Peoples R China
[7] Univ Sci & Technol China, Microscale, Hefei Natl Lab Phys Sci, Hefei 230026, Peoples R China
基金
中国国家自然科学基金;
关键词
TRANSPORT;
D O I
10.1063/5.0226822
中图分类号
O59 [应用物理学];
学科分类号
摘要
Chromium-intercalated Cr1/3TaS2 is well known for hosting a nontrivial chiral magnetic soliton lattice (CSL) with the reported highest Curie temperature ( TC similar to 151 K) and strongest spin-orbit coupling, which has significant applications in gigahertz and high-speed spintronic devices. Herein, we thoroughly investigate the magneto-electrical transport properties of Cr1/3TaS2 single crystals. For H//ab, our magnetoresistance (MR) measurements reveal distinctive step-like behaviors, which are attributed to the formation and annihilation of chiral magnetic solitons. When under an oblique field, similar but weaker MR behaviors are observed compared to H//ab, indicating the appearance of an inclination-field-induced tilted-CSL. A topological Hall effect is observed under an oblique field, which is suggested to be induced by a nonzero topological charge density resulting from the tilted chiral states. The Cr1/3TaS2 offers an intriguing platform for studying the impact of chiral magnetic structures on magneto-electrical properties, which holds promise for both future spintronic device applications and fundamental investigation.
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页数:6
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