Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet (UVC) interval using high-quality single-crystalline alpha-Ga2O3 films with Pt interdigital contacts. The films of alpha-Ga2O3 were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy. The spectral dependencies of the photo to dark current ratio, responsivity, external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200-370 nm. The maximum of photo to dark current ratio, responsivity, external quantum efficiency, and detectivity of the structures were 1.16 x 10(4) arb. un., 30.6 A/W, 1.65 x 10(4)%, and 6.95 x 10(15) Hz(0.5)<middle dot>cm/W at a wavelength of 230 nm and an applied voltage of 1 V. The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping. The alpha-Ga2O3 film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/alpha-Ga2O3 interfaces. At a wavelength of 254 nm and zero applied voltage, the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2 x 10(-2)%. The UVC detectors based on the alpha-Ga2O3 films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.