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Correlation between the Cross-Plane Thermal and Electrical Conductance in Randomly Stacked MoS2
被引:0
|作者:
Zhou, Kaiyao
[1
]
Ueji, Kan
[1
,2
]
Shiga, Takuma
[2
]
Nishidome, Hiroyuki
[1
]
Saito, Shigeki
[1
]
Nakamura, Sota
[1
]
Endo, Takahiko
[1
]
Yomogida, Yohei
[1
]
Miyata, Yasumitsu
[1
]
Kobayashi, Junei
[3
]
Yamamoto, Takahiro
[3
]
Yagi, Takashi
[2
]
Yanagi, Kazuhiro
[1
]
机构:
[1] Tokyo Metropolitan Univ, Dept Phys, Hachioji, Tokyo 1920397, Japan
[2] Natl Inst Adv Ind Sci & Technol, Natl Metrol Inst Japan, Tsukuba, Ibaraki 3058563, Japan
[3] Tokyo Univ Sci, Dept Phys, Shinjuku Ku, Tokyo 1628601, Japan
关键词:
transition metal dichalcogenide;
thermal conductance;
electrical conductance;
time-domain thermoreflectance;
van der Waals interfaces;
2-DIMENSIONAL MATERIALS;
THERMOELECTRIC-POWER;
CONDUCTIVITY;
THERMOREFLECTANCE;
TRANSPORT;
D O I:
10.1021/acsaelm.4c00911
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
van der Waals (vdW) interface is a critical component in the performance of flexible devices, such as electronics, thermal, and thermoelectric devices. Recent advances in interface design with two-dimensional (2D) materials have allowed for studying various controlled interface properties. Understanding the heat and charge transport correlation is essential for optimizing flexible device performance. However, due to experimental limitations, the correlation between the heat and charge transport characteristics across 2D vdW interfaces has not yet been elucidated. Here, we revealed the thermal and electrical conductance across four randomly stacked MoS2 layers. The simultaneous determination of cross-plane thermal and electrical conductance can be achieved using time-domain thermoreflectance measurements using Au as a metal transducer. A linear correlation between thermal and electrical conductance was observed by vacuum annealing, and such behavior can be understood by the change in interlayer distance from theoretical calculations. Our study offers insights into thermal management for nanodevices using stacked 2D materials.
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页码:5934 / 5941
页数:8
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