Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates

被引：0

作者：

Jin, Weiyi ^{[1
,2
]}

Zhang, Yumin ^{[2
,3
]}

Xia, Songyuan ^{[2
]}

Zhu, Qizhi ^{[1
,2
]}

Sun, Yuanhang ^{[1
,2
]}

Yi, Juemin ^{[2
]}

Wang, Jianfeng ^{[2
,3
]}

Xu, Ke ^{[2
,3
,4
]}

机构：

[1] Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Anhui, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Suzhou 215123, Jiangsu, Peoples R China

[3] Suzhou Nanowin Sci & Technol Co Ltd, Suzhou 215123, Jiangsu, Peoples R China

[4] Jiangsu Inst Adv Semicond, Shenyang Natl Lab Mat Sci, Suzhou 215123, Jiangsu, Peoples R China

来源：

AIP ADVANCES | 2024年 / 14卷 / 09期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

SCHOTTKY-BARRIER DIODE; CONDUCTION;

D O I：

10.1063/5.0208706

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This study investigates leakage mechanisms in vertical GaN-on-GaN Schottky barrier diodes (SBDs) and demonstrates effective mitigation strategies. The fabricated devices exhibit low reverse leakage current (1 x 10(-5) A/cm(2) at -200 V) and a high I-on/I-off ratio (similar to 10(10)), surpassing the performance of GaN SBDs on foreign substrates. We elucidate dominant leakage mechanisms-thermionic emission, Poole-Frenkel emission, and variable-range hopping-and their evolution with temperature and bias. Optimized fabrication processes, including defect etching and a novel dual-layer passivation technique, achieve over a 1000-fold reduction in leakage current.

引用

页数：9

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