High-performance ultraviolet detector based on self-assembled 3D/2D perovskite heterostructure

被引:0
|
作者
Wang, Haiyan [1 ,2 ]
Ning, Mengxin [2 ]
Wang, Qiaohe [2 ]
Liang, Yachuan [1 ,2 ]
Li, Sen [2 ]
Li, Zijiong [1 ]
Wang, Lingli [1 ]
Wang, Yan [1 ,2 ]
Jiang, Liying [1 ,2 ]
机构
[1] Zhengzhou Univ Light Ind, Acad Quantum Sci & Technol, Zhengzhou 450002, Peoples R China
[2] Zhengzhou Univ Light Ind, Sch Elect & Informat, Zhengzhou 450002, Peoples R China
关键词
MECHANISM; CRYSTALS; GROWTH; PURE;
D O I
10.1039/d4ra05576d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Heterogeneous assembly of metal halide perovskites (MHPs) structures offers convenience for promoting the interfacial properties of perovskite heterojunctions, which have been widely used in the new generation of photoelectric devices. In this study, three-dimensional (3D) CsPbBr3 quantum dots (CPB QDs) were epitaxially grown on two-dimensional (2D) (BA)2PbBr4 nanoplates (BPB NPs) via self-assembly in a toluene mixing solution. The morphological, structural, and optical properties of the synthesized structure reveal that a highly-qualified interface and coherence were formed between the two different perovskites. These heterostructures (HSs) facilitate the separation and transportation of electrons and holes in opposite directions. Based on this property, a high-performance ultraviolet light detector was fabricated by depositing a layer of CPB@BPB film on a textured silicon (T-Si) substrate. The prepared CPB@BPB/T-Si detector has shown enhanced properties i.e. quick response time, high responsivity (6.9 A W-1), high detection rate (3.17 x 109 jones), and low detection limit (0.24 mu W cm-2). This enhanced performance could be attributed to the large light-absorbing area, effective carrier transport channels in BPB NPs, and improved interfacial properties of the CPB@BPB HS. Heterogeneous assembly of metal halide perovskites (MHPs) structures offers convenience for promoting the interfacial properties of perovskite heterojunctions, which have been widely used in the new generation of photoelectric devices.
引用
收藏
页码:27323 / 27331
页数:9
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