Ultra-shallow p-type doping of silicon by performing atomic layer deposition of Al2O3 thin films onto SiO2/Si

被引：0

作者：

Khaldi, Salma ^{[1
,2
]}

Karadan, Prajith ^{[1
,2
]}

Killi, Krushnamurty ^{[1
,2
]}

de Oliveira, Clovis Eduardo Mazzotti ^{[3
]}

Yerushalmi, Roie ^{[1
,2
]}

机构：

[1] Hebrew Univ Jerusalem, Inst Chem, IL-91904 Jerusalem, Israel

[2] Hebrew Univ Jerusalem, Ctr Nanosci & Nanotechnol, IL-91904 Jerusalem, Israel

[3] Hebrew Univ Jerusalem, Appl Phys Dept, IL-91904 Jerusalem, Israel

来源：

CHEMICAL COMMUNICATIONS | 2024年

关键词：

DOPANT DIFFUSION; PASSIVATION;

D O I：

10.1039/d4cc04510f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin Al2O3 films deposited on intrinsic silicon with a native SiO2 layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism.

引用

页码：11754 / 11757

页数：4

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