Atomic layer deposition (ALD) of TiO2 and Al2O3 thin films on silicon

The essential features of the ALD process involve sequentially saturating a surface with a (sub)monolayer of reactive species, such as a metal halide, then reacting it with a second species to form the required phase in-situ. Repetition of the reaction sequence allows the desired thickness to be deposited. The self-limiting nature of the reactions ensures excellent conformality, and sequential processing results in exquisite control over film thickness, albeit at rather slow deposition rates, typically < 200nm/hr. We have been developing our capability with ALD deposition, to understand the influence of deposition parameters on the nature of TiO2 and Al2O3 films (high and low refractive index respectively), and multilayer stacks thereof These stacks have potential applications as anti-reflection coatings and optical filters. This paper will explore the evolution of structure in our films as a function of deposition parameters including temperature and substrate surface chemistry. A broad range of techniques have been applied to the study of these films, including cross sectional transmission electron microscopy, spectroscopic ellipsometry, secondary ion mass spectrometry etc. These have enabled a wealth of microstructural and compositional information on the films to be acquired, such as accurate film thickness, composition, crystallisation sequence and orientation with respect to the substrate. The ALD method is shown to produce single layer films and multilayer stacks with exceptional uniformity and flatness, and in the case of stacks, chemically abrupt interfaces. We are currently extending this technology to the coating of polymeric substrates.