Highly Tunable Interlayer Coupling and Electronic Structures of Few-Layer Graphene with Pressure

被引:0
|
作者
Mu, Lei [1 ]
Xing, Qiaoxia [1 ]
Mou, Yanlin [1 ]
Ma, Junwei [1 ]
Wang, Chong [2 ,3 ]
Zhang, Jiasheng [1 ]
Ma, Yixuan [1 ]
Lei, Yuchen [1 ]
Xie, Yuangang [1 ]
Yu, Boyang [1 ]
Pan, Chenghao [1 ]
Huang, Shenyang [1 ,4 ]
Yan, Hugen [1 ]
机构
[1] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Key Lab Micro & Nanophoton Struct,Minist Educ, Shanghai 200433, Peoples R China
[2] Beijing Inst Technol, Ctr Quantum Phys, Sch Phys, Key Lab Adv Optoelect Quantum Architecture & Measu, Beijing 100081, Peoples R China
[3] Beijing Inst Technol, Sch Phys, Beijing Key Lab Nanophoton & Ultrafine Optoelect S, Beijing 100081, Peoples R China
[4] Fudan Univ, Inst Optoelect, Shanghai 200433, Peoples R China
基金
上海市自然科学基金; 中国国家自然科学基金;
关键词
few-layer graphene; interlayercoupling; pressureeffect; infrared spectroscopy; EQUATION-OF-STATE; BAND-STRUCTURE; RAMAN; GRAPHITE;
D O I
10.1021/acs.nanolett.4c02035
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The interlayer electronic coupling is responsible for the electronic structure evolution from monolayer graphene to graphite and for the moire potential in twisted bilayer graphene. Here we demonstrate that the interlayer transfer integral (hopping parameter) increases nearly 40% with a quite moderate pressure of similar to 3.5 GPa, manifested by the resonance peak shift in the infrared spectra of all 2-10 L graphene. A simple model based on the Morse potential enabled us to establish the relationship between the transfer integral and pressure. Our work provides fundamental insights into the dependence of the electronic coupling on the interlayer distance.
引用
收藏
页码:11808 / 11813
页数:6
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