Temperature Effects on GaN/AlN Heterojunction in a Piezomagnetic and Piezoelectric Semiconductor Composite Fiber

In this article, considering the thermal effects, a PN GaN/AlN heterojunction in a piezomagnetic and piezoelectric semiconductor composite fiber driven by dynamic magnetic loads is studied. The true nonlinear constitutive equations of the electric current density for the composite heterojunction are employed. Thus, a nonlinear finite-element method (FEM) is adopted to obtain dynamic responses of the composite heterojunction, including the mechanical displacement, electric potential, and electron and hole concentrations. By comparing dynamic responses with those derived by COMSOL Multiphysics, the nonlinear FEM is verified. Based on numerical results, regulation effects of the temperature on distributions of the mechanical displacement, electron and hole concentrations, and temperature-current-voltage characteristics are discussed. A PN GaN/AlN heterojunction in a piezomagnetic and piezoelectric semiconductor composite fiber driven by dynamic magnetic loads is investigated. Dynamic responses of the mechanical displacement, electric potential, and electron and hole concentrations are obtained by using nonlinear finite-element method. Regulation effects of the temperature on electromechanical fields and temperature-current-voltage characteristics are discussed.image (c) 2024 WILEY-VCH GmbH