Heavily Fe-doped quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb

被引：0
|
作者：
Hotta, Tomoki [1 ]
Takase, Kengo [1 ]
Anh, Le Duc [1 ,2 ,3 ]
Tanaka, Masaaki [1 ,3 ,4 ]
机构：
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, 7-3-1 Hongo,Bunkyo Ku, Tokyo 1138656, Japan
[2] Japan Sci & Technol Agcy JST, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 3320012, Japan
[3] Univ Tokyo, Ctr Spintron Res Network CSRN, 7-3-1 Hongo,Bunkyo Ku, Tokyo 1138656, Japan
[4] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 08期
关键词：
ferromagnetic semiconductor; spintronics; molecular beam epitaxy;
D O I：
10.35848/1347-4065/ad6541
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study epitaxial growth and physical properties of heavily Fe-doped quaternary-alloy ferromagnetic semiconductor (In0.84-x,Ga-x,Fe-0.16)Sb thin films (Ga content x = 2%-10%, Fe content fixed at 16%). The (In0.84-x,Ga-x,Fe-0.16)Sb films have a zinc-blende-type crystal structure without any other second phase, and all the samples exhibit intrinsic ferromagnetism with high Curie temperature (>300 K). The carrier type of the (In0.84-x,Ga-x,Fe-0.16)Sb films is found to change by varying x, and a carrier-type phase diagram of (In,Ga,Fe)Sb is presented. These results suggest that (In,Ga,Fe)Sb is a promising material for semiconductor spintronic devices, such as ferromagnetic p-n junctions, operating at RT.
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页数：5
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