Heavily Fe-doped quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb

被引：0

作者：

Hotta, Tomoki ^{[1
]}

Takase, Kengo ^{[1
]}

Anh, Le Duc ^{[1
,2
,3
]}

Tanaka, Masaaki ^{[1
,3
,4
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, 7-3-1 Hongo,Bunkyo Ku, Tokyo 1138656, Japan

[2] Japan Sci & Technol Agcy JST, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 3320012, Japan

[3] Univ Tokyo, Ctr Spintron Res Network CSRN, 7-3-1 Hongo,Bunkyo Ku, Tokyo 1138656, Japan

[4] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 08期

关键词：

ferromagnetic semiconductor; spintronics; molecular beam epitaxy;

D O I：

10.35848/1347-4065/ad6541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study epitaxial growth and physical properties of heavily Fe-doped quaternary-alloy ferromagnetic semiconductor (In0.84-x,Ga-x,Fe-0.16)Sb thin films (Ga content x = 2%-10%, Fe content fixed at 16%). The (In0.84-x,Ga-x,Fe-0.16)Sb films have a zinc-blende-type crystal structure without any other second phase, and all the samples exhibit intrinsic ferromagnetism with high Curie temperature (>300 K). The carrier type of the (In0.84-x,Ga-x,Fe-0.16)Sb films is found to change by varying x, and a carrier-type phase diagram of (In,Ga,Fe)Sb is presented. These results suggest that (In,Ga,Fe)Sb is a promising material for semiconductor spintronic devices, such as ferromagnetic p-n junctions, operating at RT.

引用

页数：5

共 50 条

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