Reducing Atomic Defects in 2D Transition Metal Dichalcogenides

被引:0
|
作者
Zhang, Yunhao [1 ,2 ]
Wang, Jingwei [1 ,2 ]
Nong, Huiyu [1 ,2 ]
He, Liqiong [1 ,2 ]
Li, Shengnan [1 ,2 ]
Wei, Qiang [1 ,2 ]
Wu, Qinke [1 ,2 ]
Liu, Bilu [1 ,2 ]
机构
[1] Tsinghua Univ, Shenzhen Geim Graphene Ctr, Shenzhen Key Lab Adv Layered Mat Value Added Appli, Tsinghua Berkeley Shenzhen Inst,Tsinghua Shenzhen, Shenzhen 518055, Peoples R China
[2] Tsinghua Univ, Inst Mat Res, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
基金
美国国家科学基金会; 中国国家自然科学基金;
关键词
2D materials; atomic defects; characterization; defect repair; defect suppression; transition metal dichalcogenides; MOLYBDENUM-DISULFIDE; HYDROGEN EVOLUTION; MONOLAYER WS2; GROWTH; TRANSPORT; VACANCIES; DENSITY; EPITAXY;
D O I
10.1002/adfm.202410402
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Preparing high-quality 2D semiconductors represented by transition metal dichalcogenides (TMDCs) is of great importance for the next-generation devices. However, currently available 2D TMDCs contain many atomic defects, which greatly affect their electronic and optical properties. This review starts with the formation of atomic defects and their effects on the properties of 2D TMDCs. Then, techniques for characterizing atomic defects are systematically summarized, including atomic-resolution imaging and spectroscopy measurements. Further, recent progress on defect suppression during growth and defect repair after growth is reviewed. Finally, challenges and opportunities in this important field are discussed. This review discusses the formation of atomic defects and their effects on the properties of 2D transition metal dichalcogenides (TMDCs). Then, techniques for characterizing atomic defects are systematically summarized. Further, recent progress on defect suppression during growth and defect repair after growth is reviewed. The challenges and opportunities in this important field are also presented. image
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页数:20
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