Band gap and gate dielectric engineered novel Si0.9Ge0.1/InAs junctionless TFET for RFIC applications

In this study, we present a dual dielectric material gated novel Si0.9Ge0.1/InAs hetero-structure Junctionless TFET (DMG-HJLTFET), in which first time, a novel amalgamation of Si0.9Ge0.1/InAs along with HfO2 and SiO2 is used on the basis of band gap and gate dielectric engineering respectively. Our main goal is to examine the performance of the reported device in terms of radio frequency (RF), linearity, and intermodulation distortion parameters. The reported device's (DMG-HJLTFET) result is compared with latest published articles and conventional Si-JLTFET to show the improvement. Our simulation results reveal that DMG-HJLTFET outperforms Si-JLTFET in several key metrics, such as parasitic capacitance (C-gg, 49% down arrow), maximum oscillation frequency (f(max), 589 times up arrow), gain bandwidth product (GBP, 238.5 times up arrow), intrinsic gain (A(v), 2.24 x 10(2) times up arrow), peak transconductance (g(m), 110 times up arrow), and second-order voltage intercept point (VIP2, 330.2% up arrow). Our findings lead us to the conclusion that DMG-HJLTFET might be a promising substitute for low-power and high-frequency applications.