Implementation of Band Gap and Gate Oxide Engineering to Improve the Electrical Performance of SiGe/InAs Charged Plasma-Based Junctionless-TFET

This paper reports on a charged plasma-based adjustable bandgap source/channel (So/Ch) interface using a new semiconductor compound (SiGe/ InAs) and bimaterial oxide (HfO2/SiO2) junctionless tunnel field-effect transistors (JLTFETs). In terms of D.C characteristics, the dual material gate heterogeneous JLTFET (DMG-HJLTFET) outperforms the homogeneous-material Si-JLTFET, with ~ 389 and ~ 3 times greater ION and ION/IOFF, respectively, and ~ 63% lower Vth. At an optimal Ge-mole composition (0.1) of SiGe, the higher output (O/P) is ascribed to the conduction band (C.B) local minima created at the channel, which results in a narrower tunneling barrier width. Furthermore, compared to Si-JLTFET, the DMG-HJLTFET provides 110.5 times greater gm resulting in ~ 1.5 - and 214-times better device efficacy and cut-off frequency (fT), respectively, as well as a ~ 56% drop in the value of parasitic capacitance, promoting it for fast switching applications.